clex19.in : Mesh Refinement
Requires: CLEVER
This example illustrates the adaptative meshing capability of CLEVER. You can see the evolution of the mesh refinement using the command: interconnect capacitance AdaptC=0.04 structure="clex19". As a result you get the following output: clex19.CAP.0.str, clex19.CAP.1.str, clex19.CAP.2.str, ...... The numbers mean that if we specify 1 volt on conductor i and 0 volt on other conductors, the capacitance values are calculated between conductor i and other conductors. The file clex19.CAP.i.str is the final grid structure after this simulation step.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Deck
go VictoryProcess
Init Layout=clex19.lay Depth=1 Material=Silicon Gasheight=10 RuleFile=clex19.lmp
Electrode Substrate
#####################
# Set the Variables #
#####################
set fieldoxide_thick=0.35
set poly1_thick=0.19
set ild_thick=0.5
set metal1_thick=0.52
set metal2_thick=0.62
set metal3_thick=0.62
set metal4_thick=0.62
set metal5_thick=0.82
set IMD1_thick=0.82
set IMD2_thick=0.82
set IMD3_thick=0.82
set IMD4_thick=0.82
set passiv_thick_ox=1.5
set passiv_thick_nit=1.2
## Process Description ##
Etch Silicon Thickness=$"fieldoxide_thick" Max Mask=AA
Deposit Material=Oxide Thickness=0 Max
Deposit Material=Gateox Thickness=0.01 Max
Etch Material=Gateox Mask=*GATE reverse
deposit material=PMD Thickness=0 Max
Deposit material=polysilicon Thickness=$"poly1_thick" Max
Etch material=polysilicon Mask=CPOL
Electrode Mask=*GATE material=polysilicon
## Contact ##
deposit material=PMD thickness=$"poly1_thick" max
deposit material=PMD thickness=$"ild_thick" max
Etch material=PMD Mask=CCON Reverse
## Stop Source/Drain/Substrate Contacts Shorting to Substrate ##
## since substrate is treated as conductor here in other examples##
## substrate is a dielectric and thus no problem of short circuit ##
set high_water_mark=-($"poly1_thick" + $"ild_thick" + $"poly1_thick")
Deposit Material=Gateox Thickness=$"high_water_mark" Max
## Named polygons will be converted into electrodes ##
Electrode Mask=*CONT Material=Gateox
## Metal 1 ##
deposit material=ALU1 thickness=$"metal1_thick" max
Etch material=ALU1 Mask=CME1
Electrode Mask=CME1 material=ALU1
## M1/M2 via ##
deposit material=HDP thickness=$"metal1_thick" max
deposit material=TEOS thickness=$"IMD1_thick" max
Etch material=TEOS Mask=CVIA Reverse
Etch material=HDP Mask=CVIA Reverse
## M2 ##
deposit material=ALU2 thickness=$"metal2_thick" max
Etch material=ALU2 Mask=CME2
deposit material=HDP thickness=$"metal2_thick" max
deposit material=TEOS thickness=$"IMD2_thick" max
Etch material=TEOS Mask=CVI2 Reverse
Etch material=HDP Mask=CVI2 Reverse
## M3 ##
deposit material=ALU3 thickness=$"metal3_thick" max
Etch material=ALU3 Mask=CME3
# Electrode Mask=CME3 material=ALU3
deposit material=HDP thickness=$"metal3_thick" max
## passiv ##
deposit material=TEOS thickness=$"passiv_thick_ox" max
deposit material=NIT thickness=$"passiv_thick_nit" max
save name=clex19_0
go clever
Init Layout="clex19.lay" Structure="clex19_0.str" Map="clex19.lmp"
##########################
# Here are the constants #
##########################
set Perm_Gateox=0.01
set Perm_OXIDE=3.9
set Perm_PMD=4.2
set Perm_FOX=3.9
set Perm_TEOS=4.2
set Perm_HDP=4.1
set Perm_NIT=6
set poly_conduct=1.0/(25*$poly1_thick*1e-4)
set lil_conduct=1.0/(0.285*$poly1_thick*1e-4)
set Al_conduct_1=1.0/(74e-3*$metal1_thick*1e-4)
set Al_conduct_2=1.0/(74e-3*$metal2_thick*1e-4)
set Al_conduct_3=1.0/(74e-3*$metal3_thick*1e-4)
set Al_conduct_4=1.0/(74e-3*$metal4_thick*1e-4)
set Al_conduct_5=1.0/(39e-3*$metal5_thick*1e-4)
#################################
# Then some material Parameters #
#################################
material silicon conductivity=1000
material polysilicon conductivity=$poly_conduct
material material("ALU1") conductivity=$Al_conduct_1
material material("TEOS") permittivity=$Perm_TEOS
material material("PMD") permittivity=$Perm_PMD
material material("NIT") permittivity=$Perm_NIT
material Material("Gateox") permittivity=$Perm_Gateox
material material("ALU2") conductivity=$Al_conduct_2
material material("ALU3") conductivity=$Al_conduct_3
material material("HDP") permittivity=$Perm_HDP
save structure="clex19.str"
## Parasitic Extraction ##
Interconnect Capacitance AdaptC=0.02 structure="clex19" capsolver=1
Save Spice="clex19.net"
quit

