clex19.in : Mesh Refinement
Requires: CLEVER
This example illustrates the adaptative meshing capability of CLEVER. You can see the evolution of the mesh refinement using the command: interconnect capacitance AdaptC=0.04 structure="clex19". As a result you get the following output: clex19.CAP.0.str, clex19.CAP.1.str, clex19.CAP.2.str, ...... The numbers mean that if we specify 1 volt on conductor i and 0 volt on other conductors, the capacitance values are calculated between conductor i and other conductors. The file clex19.CAP.i.str is the final grid structure after this simulation step.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Deck
go VictoryProcess Init Layout=clex19.lay Depth=1 Material=Silicon Gasheight=10 RuleFile=clex19.lmp Electrode Substrate ##################### # Set the Variables # ##################### set fieldoxide_thick=0.35 set poly1_thick=0.19 set ild_thick=0.5 set metal1_thick=0.52 set metal2_thick=0.62 set metal3_thick=0.62 set metal4_thick=0.62 set metal5_thick=0.82 set IMD1_thick=0.82 set IMD2_thick=0.82 set IMD3_thick=0.82 set IMD4_thick=0.82 set passiv_thick_ox=1.5 set passiv_thick_nit=1.2 ## Process Description ## Etch Silicon Thickness=$"fieldoxide_thick" Max Mask=AA Deposit Material=Oxide Thickness=0 Max Deposit Material=Gateox Thickness=0.01 Max Etch Material=Gateox Mask=*GATE reverse deposit material=PMD Thickness=0 Max Deposit material=polysilicon Thickness=$"poly1_thick" Max Etch material=polysilicon Mask=CPOL Electrode Mask=*GATE material=polysilicon ## Contact ## deposit material=PMD thickness=$"poly1_thick" max deposit material=PMD thickness=$"ild_thick" max Etch material=PMD Mask=CCON Reverse ## Stop Source/Drain/Substrate Contacts Shorting to Substrate ## ## since substrate is treated as conductor here in other examples## ## substrate is a dielectric and thus no problem of short circuit ## set high_water_mark=-($"poly1_thick" + $"ild_thick" + $"poly1_thick") Deposit Material=Gateox Thickness=$"high_water_mark" Max ## Named polygons will be converted into electrodes ## Electrode Mask=*CONT Material=Gateox ## Metal 1 ## deposit material=ALU1 thickness=$"metal1_thick" max Etch material=ALU1 Mask=CME1 Electrode Mask=CME1 material=ALU1 ## M1/M2 via ## deposit material=HDP thickness=$"metal1_thick" max deposit material=TEOS thickness=$"IMD1_thick" max Etch material=TEOS Mask=CVIA Reverse Etch material=HDP Mask=CVIA Reverse ## M2 ## deposit material=ALU2 thickness=$"metal2_thick" max Etch material=ALU2 Mask=CME2 deposit material=HDP thickness=$"metal2_thick" max deposit material=TEOS thickness=$"IMD2_thick" max Etch material=TEOS Mask=CVI2 Reverse Etch material=HDP Mask=CVI2 Reverse ## M3 ## deposit material=ALU3 thickness=$"metal3_thick" max Etch material=ALU3 Mask=CME3 # Electrode Mask=CME3 material=ALU3 deposit material=HDP thickness=$"metal3_thick" max ## passiv ## deposit material=TEOS thickness=$"passiv_thick_ox" max deposit material=NIT thickness=$"passiv_thick_nit" max save name=clex19_0 go clever Init Layout="clex19.lay" Structure="clex19_0.str" Map="clex19.lmp" ########################## # Here are the constants # ########################## set Perm_Gateox=0.01 set Perm_OXIDE=3.9 set Perm_PMD=4.2 set Perm_FOX=3.9 set Perm_TEOS=4.2 set Perm_HDP=4.1 set Perm_NIT=6 set poly_conduct=1.0/(25*$poly1_thick*1e-4) set lil_conduct=1.0/(0.285*$poly1_thick*1e-4) set Al_conduct_1=1.0/(74e-3*$metal1_thick*1e-4) set Al_conduct_2=1.0/(74e-3*$metal2_thick*1e-4) set Al_conduct_3=1.0/(74e-3*$metal3_thick*1e-4) set Al_conduct_4=1.0/(74e-3*$metal4_thick*1e-4) set Al_conduct_5=1.0/(39e-3*$metal5_thick*1e-4) ################################# # Then some material Parameters # ################################# material silicon conductivity=1000 material polysilicon conductivity=$poly_conduct material material("ALU1") conductivity=$Al_conduct_1 material material("TEOS") permittivity=$Perm_TEOS material material("PMD") permittivity=$Perm_PMD material material("NIT") permittivity=$Perm_NIT material Material("Gateox") permittivity=$Perm_Gateox material material("ALU2") conductivity=$Al_conduct_2 material material("ALU3") conductivity=$Al_conduct_3 material material("HDP") permittivity=$Perm_HDP save structure="clex19.str" ## Parasitic Extraction ## Interconnect Capacitance AdaptC=0.02 structure="clex19" capsolver=1 Save Spice="clex19.net" quit