clex17.in : Creating the clex16 SRAM structure in Victory Process
Requires: CLEVER, VICTORYPROCESS Minimum Versions: Clever 3.10.13.A, VictoryProcess 7.7.6.A
This example creates the same SRAM design as in clex16, but uses the Victory Process simulator to create a more realsitic structure.
The more realistic structure is a result of three features in Victory Process:
Fisrstly, an optical solver creates an optical intensity map during photoresist exposure from a user specifiable deep-UV light source, through a lens of user specifiable numerical aperture (0.5 in this particular case). The mask can also be deliberately defocussed by a user specifyable distance in um, above or below the surface of the photoresist, using the "maskdefocus" parameter.
Secondly, photoresist mask development profile is calculated from an intensity contour map specifyable by the user as developing somewhere between zero intensity, and full intensity represented by specifying the "criticalintensity" parameter. A value of 0.5 was used in this example.
Thirdly once the photoresist mask pattern has been simulated, a geometric etch feature is used to create sloped sidewalls of 87 degrees relative to horizontal.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Deck
# Build the structure using VictoryProcess Cell Mode
go victoryprocess
Init Layout=clex17_0.lay Depth=1 material=Silicon RuleFile=clex17.lmp
Electrode Substrate
set accuracy=0.002
# Trench Etch
lithography mask=AA maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=Silicon Thickness=0.5 angle=87 dry mask=AA_LITHO \
tolerance=$accuracy
# Intrinsic gate oxide capacitance is already in Spice Model card, so
# create a low permittivity active gate oxide layer to remove intrinsic Cox
Deposit material=Oxide Thickness=0 Max
Deposit Material=Gateox Thickness=0.01 Max
Etch material=Gateox Thickness=0.1 max mask=*GATE reverse
Deposit material=Oxide Thickness=0 Max
# Poly Gate formation
Deposit material=Poly Thickness=0.2 Max
lithography mask=poly maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=Polysilicon Thick=0.22 angle=87 dry mask=poly_LITHO \
tolerance=$accuracy
Electrodes mask=*GATE material=Polysilicon
# Contacts
Deposit material=Oxide Thickness=0.4 Max
lithography mask=cont reverse maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=oxide Thick=0.66 angle=87 dry mask=cont_LITHO \
tolerance=$accuracy
# Stop Source/Drain/Substrate Contacts Shorting to Substrate
deposit material=Gateox thickness=-0.6 max
electrode mask=*CONT material=Gateox
# Metal 1
Deposit material=Aluminum Thickness=0.6 Max
lithography mask=M1 maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=aluminum Thick=0.66 angle=87 dry mask=M1_LITHO \
tolerance=$accuracy
Electrode mask=M1 material=Aluminum
# M1 to M2 Vias
deposit material=oxide thickness=1 max
lithography mask=via1 reverse maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=oxide Thick=1.1 angle=87 dry mask=via1_LITHO \
tolerance=$accuracy
# Metal 2
Deposit material=Aluminum Thickness=0.8 Max
lithography mask=M2 maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=aluminum Thick=0.88 angle=87 dry mask=M2_LITHO \
tolerance=$accuracy
Electrode mask=M2 material=aluminum
# M1 to M2 Vias
Deposit material=Oxide Thickness=0.6 Max
lithography mask=via2 reverse maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=oxide Thick=1.1 angle=87 dry mask=via2_LITHO \
tolerance=$accuracy
# Metal 3
Deposit material=Aluminum Thickness=1 Max
lithography mask=M3 maskcriticalintensity=0.5 maskaperture=0.5 \
maskdefocus=0 wavelength=0.248
Etch material=aluminum Thick=1.1 angle=87 dry mask=M3_LITHO \
tolerance=$accuracy
Electrode mask=M3 Aluminum
# Passivation
deposit material=oxide thick=1 max
save name=clex17_0
go clever
Init Layout="clex17_0.lay" Depth=1.0 Silicon Map="clex17.lmp" \
structure="clex17_0.str"
Material Silicon Conductivity=1000
Material Material("Gateox") Perm=0.01
Interconnect AdaptC=0.05 AdaptR=0.05
Save Spice="clex17_1.net"