• Parasitic Extraction Examples

    Utmost IV Examples

clex11.in : SRAM Cell with Multiple Metals and Dielectrics

Requires: CLEVER

Modern designs make use of mask layers which are not always at right angles to each other. The layout used in this example illustrates a 45 degree angle for certain mask layers. This would normally make the calculation of parasitic resistances very difficult, but with CLEVER this is handled easily.

In many cases the back-end processing makes use of different non-standard materials for the insulators and the metal conductors.

This example is based upon the simulation of an SRAM cell which consists of four different metal layers, plus polysilicon.

The initial processing stages demonstrate how Clever allows deposition of user-defined materials. Once the structure has been created these new materials can then be displayed within TonyPlot3D.

Before the parasitic extraction takes place using the Interconnect statement, the physical parameters of the new materials are defined using the Material statement.

This example has been used in the CLEVER tutorial in the manual and further information may be obtained there.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
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