clex11.in : SRAM Cell with Multiple Metals and Dielectrics
Requires: CLEVER
Modern designs make use of mask layers which are not always at right angles to each other. The layout used in this example illustrates a 45 degree angle for certain mask layers. This would normally make the calculation of parasitic resistances very difficult, but with CLEVER this is handled easily.
In many cases the back-end processing makes use of different non-standard materials for the insulators and the metal conductors.
This example is based upon the simulation of an SRAM cell which consists of four different metal layers, plus polysilicon.
The initial processing stages demonstrate how Clever allows deposition of user-defined materials. Once the structure has been created these new materials can then be displayed within TonyPlot3D.
Before the parasitic extraction takes place using the Interconnect statement, the physical parameters of the new materials are defined using the Material statement.
This example has been used in the CLEVER tutorial in the manual and further information may be obtained there.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Deck
go VictoryProcess
## Process Description ##
Init Layout=clex11.lay Depth=1 RuleFile=clex11.lmp Material=Silicon
set poly_dist=0.3
set poly_thick=0.25
set barr_thick=0.06
set arc1_thick=0.01
set arc2_thick=0.04
set diel1_thick=0.5
set metal1_thick=0.58
set diel2_thick=0.75
set metal2_thick=0.8
set diel3_thick=0.75
set metal3_thick=0.8
set diel4_thick=0.8
set diel41_thick=0.2
set metal4_thick=0.9
set liner1_thick=0.04
set liner2_thick=0.06
set passiv_thick=3
########################################################
Deposit Material=Oxide Thickness=$"poly_dist" max
Deposit Material=polysilicon Thickness=$"poly_thick" max
Etch Material=Polysilicon Mask=poly
Electrodes mask=*GATE material=Polysilicon
## First contact level ##
## Contact hole ##
Deposit Material=Oxide Thickness=$"diel1_thick" Max
Etch oxide Mask=cont Reverse
Electrodes mask=*CONT Material=Silicon
## Contact filling and etch back ##
Deposit Material=barrier Conformal Thickness=$"barr_thick"
Deposit Material=Tungsten Thickness=0 Max
Etch Thickness=$"barr_thick" Max
Deposit Material=Aluminum Thickness=$"metal1_thick" Max
Deposit Material=ARC1 Thickness=$"arc1_thick" Max
Deposit Material=ARC2 Thickness=$"arc2_thick" Max
Etch Material=ARC2 Mask=M1
Etch Material=ARC1 Mask=M1
Etch Material=Aluminum Mask=M1
Electrodes Mask=M1 Material=ARC2
## First contact level ##
## Contact hole ##
Deposit Oxide Thickness=$"diel2_thick" Max
Etch Material=oxide Mask=via1 Reverse
## Contact filling and etch back ##
Deposit Material=barrier Conformal Thickness=$"barr_thick"
Deposit Material=Tungsten Thickness=0 Max
Etch Thickness=$"barr_thick" Max
Deposit Material=Aluminum Thickness=$"metal2_thick" Max
Deposit Material=ARC1 Thickness=$"arc1_thick" Max
Deposit Material=ARC2 Thickness=$"arc2_thick" Max
Etch Material=ARC2 Mask=M2
Etch Material=ARC1 Mask=M2
Etch Material=Aluminum Mask=M2
Electrodes Mask=M2 Material=ARC2
## Second contact level ##
## Contact hole ##
Deposit Material=Oxide Thickness=$"diel3_thick" Max
Etch Material=oxide Mask=via2 Reverse
## Contact filling and etch back ##
Deposit Material=barrier Conformal Thickness=$"barr_thick"
Deposit Material=Tungsten Thickness=0 Max
Etch Thickness=$"barr_thick" Max
Deposit Material=Aluminum Thickness=$"metal3_thick" Max
Deposit Material=ARC1 Thickness=$"arc1_thick" Max
Deposit Material=ARC2 Thickness=$"arc2_thick" Max
Etch Material=ARC2 Mask=M3
Etch Material=ARC1 Mask=M3
Etch Material=Aluminum Mask=M3
Electrodes Mask=M3 Material=ARC2
Deposit Material=oxide Thickness=$"diel4_thick" Max
Deposit Material=Nitride Thickness=$"diel41_thick" Max
Etch Material=nitride Mask=via3 Reverse
Deposit Material=oxide Thickness=$"metal4_thick" Max
Etch Material=oxide Mask=M4 Reverse
Deposit Material=liner1 Conformal Thickness=$"liner1_thick"
Deposit Material=liner2 Conformal Thickness=$"liner2_thick"
Deposit Material=Copper Thickness=0 Max
########################################################
set liner_thick=(($liner1_thick)+($liner2_thick))
########################################################
Etch Thickness=$"liner_thick" Max
Electrodes Mask=M4 material=Copper
Electrodes Mask=M4 material=liner1
Electrodes Mask=M4 material=liner2
Save Name=clex11_0
go clever
Init Layout="clex11.lay" Map="clex11.lmp" Structure="clex11_0.str"
## Set material constants ##
Material polysilicon Conductivity=334000
Material Aluminum Conductivity=334000
Material Material("barrier") Conductivity=4000
Material Material("Tungsten") Conductivity=187000
Material Material("ARC1") Conductivity=16000
Material Material("ARC2") Conductivity=4000
Material Material("liner1") Conductivity=16000
Material Material("liner2") Conductivity=4000
Material Copper Conductivity=560000
Material Oxide Permittivity=4
Material Nitride Permittivity=7.2
########################################################
## Perform the Interconnect Analysis ##
Interconnect capacitance AdaptC=0.05 capsolver=1
Interconnect Resistance AdaptR=0.05
Save Spice="clex11.net"
quit