To break through the material limits of Silicon and to realize the drastic performance improvement needed to meet the severe requirements in the future, wide bandgap semiconductors such as SiC and GaN have attracted much attention. AlGaN/GaN HEMTs are generally promising candidates for switching power transistors due to their high breakdown strength and the high current density in the transistor channel giving a low on-state resistance. Further, there exists a high requirement for simulation tools to accurately predict device performance prior to fabrication because of the high inherent cost of the cut-and-try method.

OLEDs have been researched for application in display devices due to their considerable advantages. In order to further improve and optimize devices for practical applications, the electrical and optical parts have to be considered.

The light source on short wavelenghts has been researched in GaN-based lser diodes (LDs). For high efficiency emitting devices, the wave-guide layer has been investigated to obtain more stable far field patterns and the multi-quantum well layers have been researched as a means of acheiving high quantum efficiency in blue-violet lasers.

GaN heterojunction field effect transistors (HFETs) have been under extensive investigation because of their projected superb performances as high-power RF devices. The inherently high breakdown field arising from the wide bandgap guarantees not only the high power input/output characteristics but also extreme device shrinkage which is a huge advantage for increasing the highest operation frequency. Two-dimensional electron gas (2-DEG) with the charge density ten times higher than that of GaAs-based HFET and the mobility well exceeding Si enables a very low on-state resistance indispensable to RF devices. Although the superiority of the device characteristics has been demonstrated, the self heating effect has hindered the production of high power and high speed GaN-based switching devices. This effect can be significantly reduced by the cost effective heat-sink approach (Flip chip or through wafer via)[1,2].

VICTORY Process is a 3D process simulation tool which allows for an accurate simulation of the doping distributions in semiconductor devices. It is able to simulate both the insertion of the doping atoms by ion implantation and their subsequent redistribution by thermal treatment.