Two-Dimensional Device Simulation of the InGaAs/InP Avalanche Photodiodes
The high gain, and high gain-bandwidth product of the avalanche photodiodes is one of the key device for the long distance optical communication systems. For the 0.92-1.65um wavelength range, the narrow bandgap materials, like InGaAs(0.77eV), are used as the absorption medium. And the breakdown location is a major issue to design of the APD’s. In order for the device to operate with high gain and low noise[1], the design of the guard ring to suppress edge breakdown is important.