023_seu_sim : SRAM cell disruption, BSIM3 model
Requires: SmartSpice & Smartview
Minimum Versions: SMARTSPICE 3.17.26.C
The input deck uses a BSIM3 model in a single SRAM cell to show disruption due to a particle hit.
Operation: The deck runs automatically after sourcing.
A plot automatically displays showing:
- v(up) - Upset pulse at 10ns
- v(a) - Disruption on a positive signal level
- v(b) - Disrumption on a low level signal.
Input Files
sram8_MN1.in
* SRAM: PULSE DURATION 0.01n .option itl1=500 gmin=1e-15 dcgmin=1e-15 itl4=10 .option nomod nodeck numdgt=8 measraw=0 probe *.option trtol=3.5 $lvltime=2 vdd dd 0 dc 2 pulse 0 2 0 1n 1 1 1 vss ss 0 dc 0 .ic v(a)=2 v(b)=0 * Impact on a node mp1 a b dd dd P1 w=3.6u l=1.2u mn1 a b ss ss N1 w=1.8u l=1.2u mp2 b a dd dd P1 w=3.6u l=1.2u mn2 b a ss ss N1 w=1.8u l=1.2u .tran 0.2n 20n 0 1n .rad SEE Lf=5e-6 + device=mn1 annotate=1 + source=vup ; user-defined expr. + node=ndp iseu=0.8e-3 ; => MOS switchs *.probe all *.probe @mn1[qdep] @mn1[iseu] *.probe @mn1[vdsat] @mn1[vth] @mn1[vgs] @mn1[vds] .probe v(up) v(a) v(b) Vup up 0 exp 0 1 10n 5p 10.001n 100p Rup up 0 1 .include ./model.nmos .include ./model.pmos .measure tran qdeptot integral @mn1[iseu] from=0 to=20n .measure tran tc_vg cross @mn1[vth] @mn1[vgs] .measure tran t2_vd cross @mn1[vdsat] @mn1[vds] .measure tran tva8n point v(a) arg0=8n .measure tran tva17nn point v(a) arg0=17n .measure tran tvb8n point v(b) arg0=8n .measure tran tvb17nn point v(b) arg0=17n .control run batchprint .endc .iplot v(up) v(a) v(b) .end
023_seu_sim
[an error occurred while processing this directive]
Graphics
