Build Better Pixels Faster: TCAD-Powered Digital Twins for Next-Gen CIS
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Accelerating GaN Device Design with TCAD and Physics-Based Digital Twins
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Learn about Simulating Gate-All-Around Devices with Victory Atomistic
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Utilizing Silvaco TCAD for 3D Silicon Simulation
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Understanding the Modeling Framework for CMOS Technology within Victory Process
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Learn How to Utilize Victory Analytics and Machine Learning to Calibrate TCAD Data
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Learn How to Simulate 2D-TMD-Channel FETs with Atomistic Precision
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Learn How Micron Utilizes Silvaco’s Fab Technology Co-Optimization for Development and Manufacturing of Memory Technologies
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Applying Artificial Intelligence in Fab Technology Co-Optimization (FTCOTM)
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Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices
March 28, 2024
During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g., Short Circuit and UIS tests). In this webinar we will show how the impact of a short circuit of a defect localized in the active area has been investigated by means of TCAD simulations performed with Silvaco software.