In the following video, I interview Silvaco customer Randy Caplan of Silicon Creations from the show floor at DAC 2019, in Las Vegas, about the latest trends and challenges for nanometer IC design success. He talks about using a suite of Silvaco design tools down to the latest 5 nm silicon process nodes. A full ranscript of the conversation is below, as well.
July 24, 2019
Since its invention in the early 1970s, liquid crystal on silicon (LCoS) technology has proven its success in a wide range of fields such as displays, adaptive optics, lithography and telecommunications. In this webinar, we will show the way of analyzing a phase-only LCoS-SLM using the simulation tool Clever LCD. Specifically, issues arising in driving the pixels and in shrinking the pixel size will be presented.
On Monday, May 13, Silvaco announced that the semiconductor design IP of Samsung Foundry is now marketed, licensed and supported through Silvaco. The addition of Samsung production-proven design IP complements Silvaco’s existing SIPware IP products and solutions—embedded processors, wired interfaces, bus fabrics, peripheral controllers, cores for automotive, consumer and IoT/sensor applications. The initial offering of hard design IP is for the 14nm process node and is expected to extend to advanced technology nodes at 11nm, 10nm and 8nm, as well as mature planar technologies such as 28nm.
In this 3-part webinar series, viewers will be introduced to the suite of Silvaco TCAD software, and offered starter training and tutorial. The series will allow them to approach the complexity of suing TCAD from a good starting point and to learn quickly and confidently how to achieve successful TCAD simulation
Silvaco did Executive Video Interviews at our booth in the middle of the show floor at Display Week 2019 in San Jose. We interviewed industry experts on what they expected for the Display industry in 2019 and what technical challenges that needed to be met.
May 22, 2018
This webinar shows how to use Silvaco simulators for OS TFT device simulation. The carrier-electron transport and electronic states of OSs are reflected in the mobility model and DOS (density of subgap states) distribution.