Device Simulation of Oxide Semiconductor TFTs: Device Modeling and Self-Heating Effects
Oxide semiconductors (OSs) are used for thin-film transistors (TFTs) because OSs have the properties of high mobility, wide band gap, and low process temperature. OS TFTs are not only employed in new flat-panel displays, but also studied for other applications, such as sensors, solar cells, and memories. In developing electronic devices with OS TFTs, it is important to know how the properties of the OS material and the structure of the device will affect the TFT’s electrical characteristics. Device simulation is one of the most useful tools to do this.
This webinar shows how to use Silvaco simulators for OS TFT device simulation. The carrier-electron transport and electronic states of OSs are reflected in the mobility model and DOS (density of subgap states) distribution. We talk about determination methods of the model parameters and show that device simulation employing the parameters can reproduce measured electrical properties of the OS TFT over a wide range of temperatures. In addition, the channel-length dependence considering self-heating effects is also discussed.
What attendees will learn:
- Device simulation of OS TFTs
- Mobility model and DOS distribution
- Model parameter extraction
- Application: temperature dependence of IGZO TFT
- Channel-length dependence
- Channel-length dependence of IGZO TFT
- Device simulation considering self-heating effects