GaN-Based LEDs – Combining Process and Device TCAD to Optimize Substrate Patterning and Maximize Light Extraction Efficiency
The light extraction efficiency of GaN-based LEDs can be significantly enhanced by patterning the sapphire substrate. Optimized substrate geometries reduce the detrimental effect of total internal reflection and thus improve LED performance. A semiconductor fabrication technique that enables particularly advantageous substrate patterning is anisotropic wet etching of sapphire. The resulting three-dimensional etch profiles are complex and need to be accurately predicted to find the ideal process parameters for maximal LED efficiency.
In this webinar, a workflow that combines process and device TCAD to support the design of GaN-based LEDs is presented. The workflow integrates three-dimensional process simulation capabilities (Silvaco Victory Process), physical models for wet etching of sapphire, and light extraction ray-tracing calculations (Silvaco Victory Device). Thus, the impact of process parameters on LED performance is quantified.
What attendees will learn:
- Capabilities of Silvaco Victory Process for strongly anisotropic etching
- How to model the intricate wet etching anisotropy of sapphire
- How Process and Device TCAD can be combined
- Impact of patterned sapphire substrates on GaN-based LEDs