GaN-Based LEDs – Combining Process and Device TCAD to Optimize Substrate Patterning and Maximize Light Extraction Efficiency
The light extraction efficiency of GaN-based LEDs can be significantly enhanced by patterning the sapphire substrate. Optimized substrate geometries reduce the detrimental effect of total internal reflection and thus improve LED performance. A semiconductor fabrication technique that enables particularly advantageous substrate patterning is anisotropic wet etching of sapphire. The resulting three-dimensional etch profiles are complex and need to be accurately predicted to find the ideal process parameters for maximal LED efficiency.
In this webinar, a workflow that combines process and device TCAD to support the design of GaN-based LEDs is presented. The workflow integrates three-dimensional process simulation capabilities (Silvaco Victory Process), physical models for wet etching of sapphire, and light extraction ray-tracing calculations (Silvaco Victory Device). Thus, the impact of process parameters on LED performance is quantified.
What attendees will learn:
- Capabilities of Silvaco Victory Process for strongly anisotropic etching
- How to model the intricate wet etching anisotropy of sapphire
- How Process and Device TCAD can be combined
- Impact of patterned sapphire substrates on GaN-based LEDs
Alexander Toifl is currently in the final stage of pursuing a doctoral degree in the area of process TCAD with the Christian Doppler Laboratory for High Performance at the Institute for Microelectronics, TU Wien, Austria. His research interests include anisotropic etching and epitaxy of three-dimensional topographies, postimplantation annealing of wide-bandgap materials, and LEDs. He holds a Bachelor’s degree in Electrical Engineering and a Master’s degree in Microelectronics and Photonics from TU Wien.
WHO SHOULD ATTEND:
Device and process engineers, and management looking for solutions to design and optimize GaN-based LEDs
When: May 20, 2021