High Voltage Power Device Modeling with HiSIM_HV 2

TCAD to SPICE simulation of SiC and Si Power Devices

Validation of CLEVER Interconnect Parasitics with 0.18 µm Process Measurements Benoit Froment and Herve Jaouen – SGS-Thomson Microelectronics

CLEVER can perform accurate field solver extractions of resistance and capacitance from 3D structures generated from realistic process simulation. Comparison of CLEVER results with measurements made by SGS-Thomson Microelectronics were done to validate the simulator.