Radiation, SEU and Reliability

The full text for most of these papers may be found at the IEEE website at www.ieee.org.

Takashi Kameshima, Shun Ono, Togo Kudo, Kyosuke Ozaki, Yoichi Kirihara, Kazuo Kobayashi, Yuichi Inubushi, Makina Yabashi, Toshio Horigome,Andrew Holland, Karen Holland, David Burt, Hajime Murao and Takaki Hatsui,
“Development of an X-ray pixel detector with multi-port charge-coupleddevice for X-ray free-electron laser experiments“,
Rev. Sci. Instrum. 85, 033110 (2014).

Miin-Horng Juang, Jim Yu, C.C. Hwang, D.C. Shye, J.L. Wang,
“Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation”,
Microelectronics Reliability, In Press, Corrected Proof, Available online 19 September 2010.

Saeed Mohammadi, Ali Afzali-Kusha,
“Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects”,
Microelectronics Reliability, Vol. 50, Issue 3, March 2010, pp. 338-345.

Feng Zhao, Mohammad M. Islam, Biplob K. Daas, Tangali S. Sudarshan,
“Effect of crystallographic dislocations on the reverse performance of 4H-SiC p–n diodes”,
Materials Letters, Vol. 64, Issue 3, 15 February 2010, pp. 281-283.

Ying Wang, Hai-fan Hu, Chao Cheng,
“Simulation study of semi-superjunction power MOSFET with SiGe pillar”,
Superlattices and Microstructures, Vol. 47, Issue 2, February 2010, pp. 314-324.

M.C. Tu, Y.C. Wang, H.Y. Ueng,
“Linearity optimizing on HBT power amplifier design”,
Microelectronics Journal, Vol. 40, Issue 12, December 2009, pp. 1714-1718.

A. Alaeddine, M. Kadi, K. Daoud, B. Mazari,
“Effects of electromagnetic near-field stress on SiGe HBT’s reliability”,
Microelectronics Reliability, Vol. 49, Issues 9-11, September-November 2009, pp. 1029-1032.

Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park,
“NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs”,
Microelectronics Reliability, Vol. 49, Issues 9-11, September-November 2009, pp. 1044-1047.

Seabroke, G. M., Holland, A. D., Burt, D., Robbins, M. S.,
“Modelling electron distributions within ESA’s Gaia satellite CCD pixels to mitigate radiation damage”
in Astronomical and Space Optical Systems, edited by Penny Warren, Cheryl Marshall, Proceedings of SPIE Vol. 7439 (SPIE, Bellingham, WA 2009) 743905

Weatherford, T., Wang, Y., & Tracy, S.,
“TCAD analysis of self heating in AlGaN/GaN HEMTs under pulsed conditions”
IEEE Integrated Reliability Workshop 2009

Ciezki J., Vineyard G., & Weatherford T.,
“The investigation of the electro-thermal characteristics of a GTO thyristor at turn off using Silvaco ATLAS”
IEEE Integrated Reliability Workshop 2009

Weatherford, T., Wang, Y., & Tracy, S.,
“Self heating of AlGaN/GaN HEMTs in pulsed operation”
Reliability Of Compound Semiconductors Workshop 2009

K. Romanjek, E. Augendre, W. Van Den Daele, B. Grandchamp, L. Sanchez, C. Le Royer, J.-M. Hartmann, B. Ghyselen, E. Guiot, K. Bourdelle, S. Cristoloveanu, F. Boulanger, L. Clavelier,
“Improved GeOI substrates for pMOSFET off-state leakage control”,
Microelectronic Engineering, Vol. 86, Issues 7-9, July-September 2009, pp. 1585-1588

H. Wong, Y. Fu, J.J. Liou, Y. Yue,
“Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors”,
Microelectronics Reliability, Vol. 49, Issue 1, January 2009, pp. 13-16.

Xiang Liu, Jiann S. Yuan, Juin J. Liou,
“InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability”,
Microelectronics Reliability, Vol. 48, Issues 8-9, August-September 2008, pp. 1212-1215.

M. A. Belaid, K. Ketata,
“Hot-carrier effects on power RF LDMOS device reliability”,
2008 14th International Workshop on Thermal Investigation of ICs and Systems, pp. 123-7, 2008.

M. Gares, M. A. Belaid, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, P. Eudeline,
“Study of hot-carrier effects on power RF LDMOS device reliability”,
Microelectronics Reliability, Vol. 47, No. 9-11, Sept.&Nov. 2007, pp. 1394-1399.

F. Schwierz and C. Schippel,
“Performance trends of Si-based RF transistors”
Microelectronics Reliability, Vol. 47, Issues 2-3, February-March 2007, pp. 384-390.

Harsupreet Kaur, Sneha Kabra, Simrata Bindra, Subhasis Haldar and R.S. Gupta,
“Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability”,
Solid-State Electronics, Vol. 51, Issue 3, March 2007, pp. 398-404.

Haddou Elghazi, Anouar Jorio and Izedine Zorkani,
“Analysis of temperature and 1 MeV proton irradiation effects on the light emission in bulk silicon (npn) emitter-base bipolar junctions”,
Optics Communications, Vol. 280, Issue 2, 15 December 2007, pp. 278-284.

J. -P. Raskin,
“Wideband characterization and simulation of advanced MOS devices for RF applications”,
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. 3-4 Oct. 2005, pp. 109&112.

P. E. Dodd,
“Physics-based simulation of single-event effects”
IEEE Transactions on Device and Materials Reliability, Vol. 5, Issue 3, September 2005, pp. 343

J. Urresti, S. Hidalgo, D. Flores, J. Roig, I. Cortés, J. Rebollo,
“Lateral punch-through TVS devices for on-chip protection in low-voltage applications”
Microelectronics Reliability, Vol. 45, Issue 7-8, July 2005, pp. 1181-1186.

I. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo and J. Rebollo,
“Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile”
Microelectronics Reliability, Vol. 45, Issue 3-4, March 2005, pp. 493-498

P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, R. Mosca,
“Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications”
Solid-State Electronics, Vol. 49, Issue 2, February 2005, pp. 183-191

P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, H. J. Barnaby, O. Mion,
“Single event transient effects in a voltage reference”
Microelectronics Reliability, Vol. 45, Issue 2, February 2005, pp. 355-359

A. Gehring and S. Selberherr,
“Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices”
IEEE Transactions on Device and Materials Reliability, Vol. 4, Issue 3, September 2004, pp. 306

H. V. Nguyen, C. Salm, B. H. Krabbenborg, J. Bisschop, A. J. T. Mouthaan, F. G. Kuper,
“Fast thermal cycling-enhanced electromigration in power metallization”
IEEE Transactions on Device and Materials Reliability, Vol. 4, Issue 2, June 2004, pp. 246-255

K. Leinonen,
“Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope”
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors

M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter,
“Two-dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics”
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 124-125

S. T. Liu, H. Y. Liu, D. Anthony, W. Heikkila, H. Hughes, A. Campbell, E. L. Petersen, P. J. McMarr,
“Proton-induced upset in SOI CMOS SRAMS”
IEEE Transactions on Nuclear Science, Vol. 51, Issue 6 II, December 2004, pp. 3475-3479

A. Y. Kovalgin, J. Holleman, G. Iordache,
“A micro-scale hot-surface device based on non-radiative carrier recombination”
34th European Solid-State Device Research Conference, ESSDERC, 21-23 September 2004, Leuven, Belgium

J. S. Kauppila, L. W. Massengill, W. Tim Holman, A. V. Kauppila, S. Sanathanamurthy,
“Single event simulation methodology for analog/mixed signal design Hardening”
IEEE Transactions on Nuclear Science, Vol. 51, Issue 6 II, December 2004, pp. 3603-3608

P. Hazdra, V. V. Komarnickij,
“Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range”
Diffusion and Defect Data Pt.B: Solid State Phenomena, Vol. 95-96, 2004, pp. 387-392.

H. Y. Liu, S. T. Liu, K. W. Golke, D. K. Nelson, W. W. Heikkila, W. C. Jenkins,
“Proton Induced Single Event Upset in a 4M SOI SRAM”
IEEE International SOI Conference, 2003, pp. 26-27

F. Matsuoka and F. Masuoka,
“Numerical analysis of alpha-particle-induced soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cell”
IEEE Transactions on Electron Devices, Vol. 50, Issue 7, 2003, pp. 1638-1644.

P. Gouker, J. Burns, P. Wyatt, K. Warner, E. Austin, R. Milanowski,
“Substrate Removal and BOX Thinning Effects on Total Dose Response of FDSOI NMOSFET”
IEEE Transactions on Nuclear Science, Vol. 50, Issue 6 I, December 2003, pp. 1776-1783

W. Chen, V. Pouget, H. J. Barnaby, J. D. Cressler, G. Niu, P. Fouillat, Y. Deval, D. Lewis,
“Investigation of Single-Event Transients in Voltage-Controlled Oscillators”
IEEE Transactions on Nuclear Science, Vol. 50, Issue 6 I, December 2003, pp. 2081-2087

D. R. Ball, R. D. Schrimpf, H. J. Barnaby,
“Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors”
IEEE Transactions on Nuclear Science, Vol. 49 I, Issue 6, December 2002, pp. 3185-3190

Y. Boulghassoul, L. W. Massengill, T. L. Turflinger, W. T. Holman,
“Frequency domain analysis of analog single-event transients in linear circuits”
Nuclear Science, IEEE Transactions on, Vol.: 49 Issue: 6, Dec. 2002 pp. 3142 -3147

P. Hazdra, K. Brand and J. Vobeck,
“Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and atoms 2002, Vol. 192, no3, pp. 291-300

E. V. Monakhov, B. S. Avset, A. Hall,
“Radiation-induced electronic defect levels in high-resistivity Si detectors”
Diffusion and Defect Data Pt.B: Solid State Phenomena, Vol. 82-84, 2002, pp. 441-446

R. Quintero, A. Cerdeira and A. Ort,
“Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors”
Microelectronics Reliability, Vol. 42, January 2002, pp. 67-76

F. Moscatelli, A. Santocchia, D. Passeri, G. M. Bilei, B. C. MacEvoy, G. Hall and P. Placidi,
“An enhanced approach to numerical modeling of heavily irradiated silicon devices”
Nuclear Instruments and Methods in Physics Research Section B, Vol. 186, Issues 1-4, January 2002

A. Sternberg, L. Massengill, R. Schrimpf, P. Calvel,
“Application Determinance of Single Event Transient Characteristics in the LM111 Comparator”
IEEE TNS, Dec. 2001

R. K. Lawrence, D. E. Ioannou, W. C. Jenkins, S. T. Liu, S. T.,
“Gated-diode characterization of the back-channel interface on irradiated SOI wafers”
IEEE Transactions on Nuclear Science, Vol. 48, Issue 6 I, December 2001, pp. 2140-2145

M. P. Pagey, R. D. Schrimpf, K. F. Galloway and et al.,
“A hydrogen-transport-based interface-trap-generation model for hot-carries reliability prediction”
IEEE Electron Device Letter, Vol. 22, Jun. 2001, pp. 290-292

R. K. Lawrence, A. A. Salman, D. E. Ioannou, W. C. Jenkins, S. T. Liu,
“Modelling the gated-diode response of an irradiated SOI back-channel interface”
IEEE International SOI Conference, 2001, pp. 127-128

S. Abedinpour, R. Burra, K. Shenai,
“Stress analysis of a full bridge ZVS DC-DC converter”
Conference Record&IAS Annual Meeting (IEEE Industry Applications Society), Vol. 1, 2001

H. J. Barnaby, R. D. Schrimpf, A. L. Sternberg, V. Berthe, C. R. Cirba, and R. L. Pease,
“Proton Radiation Response Mechanisms in Bipolar Analog Circuits”
IEEE Trans. Nuclear Science, accepted for 2001 publication

Todd R. Weatherford and Peter K. Schiefelbein,
“SEE Analysis of Digital InP-Based HBT Circuits at Gigahertz Frequencies”
IEEE Trans. on Nuclear Sci., Vol. 48, No. 6, Dec. 2001, pp. 1980&1986

A. Sternberg, L. Massengill, R. Schrimpf, Y. Boulghassoul, H. Barnaby, S. Buchner, R. Pease, J.,
“Effect of Amplifier Parameters on Single Event Transients in an Inverting Operational Amplifier”
Howard, presented at RADECS 2001

I. Mart,
“Characterization, simulation and modeling of PLL under irradiation using HDL-A”
2000 IEEE/ACM International Workshop on Behavioral Modeling and Simulation, 2000, pp. 57-61

D. J. Fouts, G. R. McKerrow, G. K. Lum, S. S. Noe, A. S. Lambley,
“Second-layer polysilicon structures for gate end-around leakage-current compensation in bulk CMOS ICs”
Microelectronics Reliability, Vol. 40, June 2000, pp. 955-963

A. Maouad, A. Hoffmann, A. Khoury, J. -P. Charles,
“Characterization of high-density current stressed IGBTs and simulation with an adapted SPICE sub-circuit”
Microelectronics Reliability, Vol. 40, June 2000, pp. 973-979

O. Buiu, I. S. Al-Kofahi, S. Taylor and J. Ellis,
“Channel distribution of generated interface states in 0.35 um LDD nMOSFET”
Microelectronics Reliability, Vol. 40, Issues 4-5, 1 April 2000, pp. 727-730

Yun-Gueon Shin and Jong-Hwa Lee,
“A study of electrical characteristics and reliability on flash EEPROM cell”
Proceedings of the 4th IEEE Korea-Russia International Symposium on Science and Tec

Anil K. G., Pompl T., Eisele I,
“Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETS”
Proc. ESSDERC 2000, pp. 132-135

Duane R., Concannon A., McCarthy D., Mathewson A.,
“Inverse Modelling of Trapped Charge in Hot-Carrier Stressed nMOSFET”
Proc. ESSDERC 2000, pp. 368-371

Mukundan S. K., Pagey M. P., Cirba C. R., Schrimpf R. D. and Galloway K. F.,
“TCAD based Simulation of Hot-Carrier Degradation in p-channel MOSFETs Using Silicon Energy-Balance and Oxide Carrier Transport”
Journal of Technology Computer Aided Design, 2000

H. J. Barnaby, C. R. Cirba, S.L. Kosier, P. Fouillat, X. Montagner, R.D. Schrimpf,
“Modeling Ionizing Radiation Defect Generation in Bipolar Oxides with Gated Diodes”
IEEE Trans. Nuclear Science, 47, pp. 514-518, 2000

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J.F. Krieg, M. C. Maher,
“Origins of Total-Dose Response Variability in Linear Bipolar Microcircuits”
IEEE Trans. Nuclear Science, accepted for 2000 publication

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, K. F. Galloway, M. Pagey, R. Milanowski,
“A Two Dimensional Engineering Model for Radiation-Induced Interface Trap Formation”
GOMAC 2000 Digest of Papers, pp. 613&616

P. Hazdra, J. Rubes, J. Vobecky,
“Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement”
Nuclear Instruments and Methods in Physics Research B, Vol. 159, December 1999, pp. 207-217.

D. Bortoletto, G. Bolla, M. Guenther, G. P. Grim, R. L. Lander, S. Willard, Z. Li,
“Radiation damage studies of multi-guard ring p-type bulk diodes”
Nuclear Instruments and Methods in Physics Research A, Vol. 435, October 1999, pp. 178-186

G. Bolla, D. Bortoletto, G. P. Grim, R. L. Lander, Z. Li, S. Willard,
“First results on radiation damage studies using n+/p/p+ diodes fabricated with multi-guard ring structures”
Nuclear Instruments and Methods in Physics Research A, Vol. 423, March 1999, pp. 290-296

T. H. Prettyman,
“Theoritical framework for mapping pulse-shapes in semiconductor radiation detectors”
Nuclear Instruments and Methods in Physics Research A428 (1999), pp. 72-80

Mukundan, S. K., Pagey M. P., Schrimpf R. D., Galloway, K. F.,
“Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy balance equations and oxide carrier transport equations”
Integrated Reliability Workshop Final Report, 1999 IEEE International, 1999, pp. 92

H. J. Barnaby, R. J. Milanowski, R. D. Schrimpf, L. W. Massengill, M. Pagey,
“Modeling Ionizing Radiation Effects in Lateral PNP BJT´s with Non-uniform Trapped Charge Distributions”
Journal of Radiation Effects Res. Engr., 17, pp. 75-84, 1999

H. J. Barnaby, R. D. Schrimpf, J. Krieg, J. Titus, M. Gehlhausen, P. Cole, D. Emily, T. Turflinger, R. L. Pease, S.C. Witczak, M. C. Maher,
“Identification of Degradation Mechanisms in a Bipolar Linear Voltage Comparator Through Correlation of Transistor and Circuit Response”
IEEE Trans. Nuclear Science, 46, pp. 1666-1673, 1999

H. J. Barnaby, C. R. Cirba, S. L. Kosier, P. Fouillat, X. Montagner, R. D. Schrimpf,
“Minimizing Gain Degradation in Lateral PNP BJTs Using Gate Control”
IEEE Trans. Nuclear Science, 46, pp. 1652-1659, 1999

H. J. Barnaby, C. R. Cirba, Steve Kosier, P. Fouillat, X. Montagner, R. D. Schrimpf,
“Modeling Ionizing Radiation Defect Generation in Bipolar Oxides with Gated Diodes”
Proceedings of the 1999 RADECS European Conference, pp C29-C31.

R. J. Graves, C. R. Cirba, R. D. Schrimpf, R. J. Milanowski, A. Michez, D. M. Fleetwood, S. C. Witczak, and F. Saigne,
“Modeling low-dose-rate effects in irradiated bipolar-base oxides”
IEEE Transactions on Nuclear Science, 45(6 pt.1):2352&60, December 1998

C. Leroux, P. Salome, G. Reimbold, D. Blachier, G. Guegan, M. Bonis,
“Building in reliability with latch-up, ESD and hot carrier effects on 0.25mm CMOS technology”
Microelectronics Reliability, Vol. 38, October 1998, pp. 1547-1552.

Z. Li, et al.,
“Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6”
Vol. 409, May 1998, pp. 180-183

A. Tixier, V. Senez, B. Baccus, and et al.,
“Influence of the silicon nitride oxidation on the performances of NCLAD isolation”
Microelectron. Reliab., Vol. 38, May 1998, pp. 795-805

C. Leveugle, P. K. Hurley, A. Mathewson and et al.,
“Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures”
Microelectron. Reliab., Vol. 38, Feb. 1998, pp. 233-237

Milanowski, R. et al,
“TCAD-assisted Analysis of Back-Channel Leakage in Irradiated Mesa SOI nMOSFETs”
IEEE Transactions on Nuclear Science, Vol. 45, no. 6, pp. 2593-2599, Dec. 1998

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, K.F. Galloway, M. Pagey, R. Milanowski,
“A Two Dimensional Engineering Model for Radiation-induced Interface Trap Formation”
GOMAC 1998 Digest of Papers, pp. 585&588

H. J. Barnaby, R. D. Schrimpf, D. M. Fleetwood, S. L. Kosier,
“The Effects of Emitter-Tied Field Plates on Lateral PNP Ionizing radiation Response”
Proceedings of the 1998 Bipolar/BiCMOS Circuits Technology Meeting, pp. 35-38

S. C. Williams, R. B. Hulfachor, K. W. Kim and et al.,
“Scaling trends for device performance and reliability in channel-engineered n-MOSFETs”
IEEE Trans. Electron. Devices, Vol. 45, Jan. 1998, pp. 254-260

B. S. Avset,
“Measurements on a hole trap in neutron-irradiated silicon”
Nuclear Instruments and Methods in Physics Research Section A, Vol. 388, April 19

R. Salik, P. Ferrari, A. Chosson, and G. Angnieux,
“Electrical performance in time domain of subminiature interconnections on new thin films”
Advanced Packaging Materials. Proceedings., 3rd International Symposium on Volume, Issue, 9-12 Mar 1997 pp. 143&146

B. Flechet, R. Salik, J. W. Tao, and G. Angenieux,
“Microwave characterization of thin film materials for interconnections of advanced packaging”
Proceeding of the 3rd IEEE International Symposium on Advanced Packaging Materials

A. Denisenko, W. R. Fahrner, U. Strahle and et al.,
“Radiation response of P-I-P diodes on diamond substrates of various type: Electrical properties of semiconductor-insulator homojunctions”
IEEE Trans. Nuclear Science, Vol. 43, Dec. 1996, pp. 3081-3088

J. S. Iwanczyk, B. E. Patt, J. Segal, J. Plummer, G. Vilkelis, B. Hedman, K. O. Hodgson, A. D. Cox, L. Rehn and J. Metz,
“Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications”
Nuclear Instruments and Methods in Physics Research Section A, Vol. 380, October 1996, pp. 288

B. E. Patt, J. S. Iwanczyk, G. Vilkelis and Y. J. Wang,
“New gamma-ray detector structures for electron only charge carrier collection utilizing high-Z compound semiconductors”
Nuclear Instruments and Methods in Physics Research Section A, Vol. 380, October 1996, pp. 276-2

N. Keskitalo, A. Hall,
“Simulation of forward bias injection in proton irradiated silicon pn-junctions”
Solid-State Electronics, Vol. 39, July 1996, pp. 1087-1092.

M. Allenspach¹, I. Mouret1,², J.L. Titus³, C.F. Wheatley, Jr.⁴ , R.L. Pease⁵, J.R. Brews¹, R.D. Schrimpf¹, and K.F. Galloway¹
“Single-Event Gate-Rupture in Power MOSFETs:
Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence ”

The University of Arizona, Tuscon, AZ 85721
Aerospatiale, Les Mureaux, France
Naval Surface Warfare Center&Crane, IN 47522
RR2 Box 1120, Drums, PA 18222
RLP Research, Inc., Albuquerque, NM 87122

S. C. Witczak et al.,
“Synergetic Effects of Radiation stress and Hot-Carrier Stress on the Current Gain of NPN Bipolar Junction Transistor”
IEEE Trans on Nuclear Science Dec 1994

Kosier, Combs, Wei, Schrimpf, Fleetwood, DeLaus, Pease,
“Bounding the Total-Dose Response of Modern Bipolar Transistors”
IEEE Trans. Nucl Sci. Dec, 1994

Wei, Kosier, Schrimpf,
“Dose-rate Effects on Radiation-Induced Bipolar Junction Transistor Gain Degradation”
Applied Physics Letters Oct 3, 1994

Wei, Kosier, Schimpf, Combs, DeLaus,
“Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJTs”
IEEE Bip/BICMOS Cicrs & Tech Mtg, Oct 1994

Kosier, Wei, Schrimpf, Fleetwood, DeLaus,
“Physically-Based Comparison of Hot-Carrier-Induced & Ionizing-Radiation-Induced Degradation in BJTs”
IEEE Trans. Elect Dev (to be pub. 1994)