About Gigi Boss
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Entries by Gigi Boss
How to Optimize and Boost Your Device Modeling and Characterization with Utmost IV
February 22, 2022in Modeling Webinars /by Gigi BossMarch 10, 2022 | 10:00 am – 10:30 am (PST)
In this webinar we will examine some of the key features and advantages of Utmost IV for device modeling and characterization, and the major design flows where Utmost IV is a key component.
Relating Platinum Diffusion to Minority Carrier Lifetime Control in PiN Diode: Coupled TCAD Process and Device Simulation
February 1, 2022in Simulation Standard /by Gigi BossPlatinum and gold are widely used as an effective method to control lifetime in silicon-based devices [1, 2, 3]. Platinum and gold are introduced as recombination centers to improve switching performance. Thermal diffusion is primarily used as the common method to introduce platinum or gold dopants into silicon. There is interest to better understand how the processing conditions for Pt/Au diffusion can affect switching behavior. Control and shaping of the profile is critical to obtain optimum device performance. In this article, Silvaco Victory TCAD tools [4] [5] are used to predict the effect of platinum on a PiN diode’s reverse recovery time (Trr). The simulated platinum profile from process simulation is automatically fed into the device simulator, and the relationship between platinum diffusion processing parameters and Trr is effortlessly studied.
How to Use Device Simulation as a Tool for Understanding GaN HEMTs
January 21, 2022in TCAD Webinars /by Gigi BossFebruary 24, 2022 | 10:00 am – 10:30 am (PST)
This webinar will illustrate through specific published examples of how TCAD device simulation of GaN based devices can be a powerful tool to help explain complex performance limiting device instabilities in both RF and power devices.
Managing the Complexity of FinFET Standard Cell Layout with Cello
January 21, 2022in SIPware Webinars /by Gigi BossFebruary 10, 2022 | 10:00 am – 10:30 am (PST)
In this webinar we are going to review some of the most challenging aspects of FinFET standard-cell layout design, and how Silvaco’s Cello tool can be used to address these issues.
How to Improve Physical Verification Productivity with SmartDRC/LVS
January 21, 2022in Custom Webinars /by Gigi BossFebruary 17, 2022 | 10:00 am – 10:30 am (PST)
Physical Verification is the most critical stage of microchip design. This webinar introduces SmartDRC/LVS as a highly productive tool to perform physical verification of analog, digital and mixed-signal ICs.
Enabling the Rapid Development of SiC Superjunction-MOSFETs in Collaboration with mi2-factory
January 6, 2022in Simulation Standard /by Gigi BossIntroduction
Super-junction based devices are a key enabling technology for power devices. Adjacent columns of p and n-type doped material with optimized doping levels enables box-like electric fields, maximizing the breakdown voltage. As the doping of the columns is comparatively high, the on-state losses can be minimized.
Fabrication of such structures in SiC can be particularly challenging. Ideally the p and n-type columns will be uniformly doped. Fluctuations in doping can cause local electric field variation causing the breakdown voltage to be less than ideal. Super-junction structures can be conceived in a number of ways, but current schemes all present challenges [1] in SiC. The simplest method, as used with silicon is to use multiple implants and epitaxy steps. This is quite impractical with SiC due to the low diffusivity of dopants, requiring many sequential implantation steps. Trench etch and refill is an alternative scheme but provides its own challenges with regards to charge control and quality of the trench re-fill.
Learn How to Perform Device Meshing with Silvaco’s Victory Mesh TCAD Solution
January 4, 2022in TCAD Webinars, Uncategorized /by Gigi BossJanuary 27, 2022 | 10:00 am – 10:30 am (PST)
This webinar gives an overview of Victory Mesh’s Conformal meshing (semi-structured Cartesian-based sampling) and Delaunay meshing (unstructured sampling) and their refinement capabilities.
Colin Shaw of Silvaco Named Si2 Pinnacle Award Winner
December 13, 2021in Custom News, Foundation IP News, Library News, Modeling News, News, Parasitics+Netlist News, SIPware News, SPICE News, TCAD News, Variation News /by Gigi BossDecember 12, 2021
TCAD Modeling of Amorphous Selenium-based Avalanche Photon Detectors
November 1, 2021in Simulation Standard /by Gigi BossAbstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house bulk Monte Carlo simulations. The steady-state dark current behaviors in various a-Se detectors are analyzed by identifying all relevant current conduction mechanisms (e.g., space-charge limited current, bulk thermal generation, Schottky emission, Poole-Frenkel activated mobility and hopping conduction), as well as “acceptor” and “donor” defect density of states located in the forbidden band gap of a-Se. The theoretical models are validated by comparing them with experimental steady-state dark current densities in avalanche and non-avalanche a-Se detectors.
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