• Simulation Standard Technical Journal

Simulation Standard Technical Journal

A Journal for Process and Device Engineers

Dynamic Testing for Power MOSFET

In this paper we demonstrate the application of the Silvaco TCAD suite from the technology process to circuit analysis for a planar SiC MOSFET (DMOS).

The Impedance Field and Small-Signal Noise

This is an introduction to the impedance field method and its application to the calculation of the small-signal noise in Victory Device.

Trajectory Replication in Monte Carlo Ion Implantation with Victory Process

This edition introduces trajectory replication in Victory Process Monte Carlo ion implantation, with a focus on:
  • Reducing computation time by reusing ion paths in similar regions
  • Maintaining physical accuracy while accelerating simulations
  • Best-use cases and scenarios to avoid
  • Achieving speed-ups of up to 10×

A New CMOS Simulation Template: Addressing Advanced Diffusion and Annealing Effects

As the scaling of CMOS devices continues, the accuracy requirements for simulating ion implantation and diffusion processes have become increasingly stringent.

Introduction to Virtual Metrology with Victory Extract

Victory Extract is a new tool for the 2024 baseline release. Victory Extract unifies the older extraction offerings from DeckBuild (extract), Victory Process (extract3d) and Victory Mesh (extract3d) and introduces some newer metrology features.
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