• Simulation Standard Technical Journal

Simulation Standard Technical Journal

A Journal for Process and Device Engineers

Enabling the Next Generation of High-Voltage Power: Gallium Oxide Trench Schottky Diodes from Simulation to System

β-Ga2O3 is set to revolutionize high-voltage power conversion, with ultra-low losses and a high critical electric field that make it ideal for next-generation power devices, enabling three-phase HVDC AC/DC and DC/AC conversion in the 1–6 kV, 0.5–0.8 kA range for AI data centre power delivery, renewable energy systems, high-voltage circuit breakers, and ESD protection.

Victory TCAD 2025 Release

With the 2025 release, Silvaco is yet again leading innovation in TCAD, driven by its over 40 years of experience. This release introduces major enhancements across simulation engines, solver performance, physical models, and multi-physics workflows for large-scale 3D applications.

Accelerating Vertical GaN Power Technology Development with Physics-based Digital Twins for 800V DC AI Factory Power Infrastructure

In this paper we will discuss accelerating vertical GaN power technology development with physics-based Digital Twins for 800V DC AI factory power infrastructure.

Dynamic Testing for Power MOSFET

In this paper we demonstrate the application of the Silvaco TCAD suite from the technology process to circuit analysis for a planar SiC MOSFET (DMOS).

The Impedance Field and Small-Signal Noise

This is an introduction to the impedance field method and its application to the calculation of the small-signal noise in Victory Device.

Trajectory Replication in Monte Carlo Ion Implantation with Victory Process

This edition introduces trajectory replication in Victory Process Monte Carlo ion implantation, with a focus on:
  • Reducing computation time by reusing ion paths in similar regions
  • Maintaining physical accuracy while accelerating simulations
  • Best-use cases and scenarios to avoid
  • Achieving speed-ups of up to 10×
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