UFSOI V7.0 (UFPDB V2.0) Model Released in SmartSpice

Introduction

Version 7.0 of the University of Florida Silicon-On-Insulator (UFSOI), released in 2002, is now available with Silvaco SmartSpice by setting LEVEL to 21. SmartSpice uses version 7 by default, but versions 4.5, 5.0, 5.0 rev 1.0, and 5.0 rev 6.0 are still available through resetting the VERSION and REVISION parameters.

Model Features (prior to version 7.0) [1]

The UFSOI is a physical, charge-based, and process-based SOI MOSFET model that has evolved from the basic modeling of thin-film devices. The charge modeling is physically linked to channel-current modeling. All terminal charges and their derivatives are continuous for all bias conditions. The UFSOI model includes both NFD/PDB (Partially Depleted Bulk) and FD (Fully Depleted) models, which are set with the BODY parameter in version 6.0 and later. In previous versions, FD and NFD models were selected with NFDMOD parameter:

The other parameters are process-based and are directly related to the device structure and material properties. This model is charge-based in order to ensure charge conservation and proper accounting for all transcapacitances. The model is extended to account for an accumulated charge in the body that can drive a floating-body mode dynamic bipolar effect in all regions of operation. There is optional accounting for LDD and LDS.