EXACT Worksheet Utility to View Variables and Data
Q: EXACT has powerful scripting utilities for manipulating the final capacitance data and variables but is there an easier graphical front end that would also allow me to view the data?
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Meanwhile lets just say that we are proud Graham Bell contributed a whooping 541 entries.
Q: EXACT has powerful scripting utilities for manipulating the final capacitance data and variables but is there an easier graphical front end that would also allow me to view the data?
HiSIM (Hiroshima university STARC IGFET Model) is one of the surface potential based Spice models [1], [2] and pioneered the iterative approach to obtain the surface potential applicable in compact models. The model aims for MOSFET technology of 100 nm or below. The parameter extraction procedure was introduced first by the model developers: Semiconductor Technology Academic Research Center (STARC) [3], [4]. Silvaco UTMOST-III introduced the first version of the local optimization strategies for HiSIM-1.1 in 2002 [5]. Since then, the parameter extraction methodology has been reviewed thoroughly. This article is meant to provide significant aspects on the HiSIM version 1.2 parameter extraction for UTMOST-III users.
There are several ways to account for the effect of STI-induced stress in standard compact models. The purpose of this article is to present two different approaches developed by the universities of Berkeley and Hiroshima. In both cases, new equations were derived and new parameters have been introduced in the latest versions of BSIM4 and HiSIM compact models. These new versions are currently supported by Silvaco SmartSpice/UTMOST softwares.
In this article, we describe practical behavioral modeling for highly non-linear circuits using Verilog-A, which is analog extension of Verilog-AMS. At first, we describe behavioral modeling techniques for phase/frequency detectors (PFD) and voltage-controlled oscillators (VCO) those are essential part of phase-locked loop systems shown in Figure.1. Model parameter extraction techniques are described and demonstrated later. Finally, these models are simulated with SmartSpice and verified against the results of transistor circuit simulations.
Q. My simulation fails because SmartSpice cannot find a binned model, what does this mean?
HIPEX-Net is a hierarchical layout extractor. It can create both hierarchical and flat SPICE formatted netlists of the extracted layout. HIPEX-Net also performs ERC (Electric Rule Checking) on the extracted netlist. This checks for connectivity errors in a chip design such as opens, shorts, and dangling nodes.
There is the recent improvement in Expert Layout Editor, the “Shortest path” option was added to Flight line styles (Net Bar). This option allows to build the shortest tree (network) connecting all selected nodes.
This article presents an overview of new features added to Silvaco’s Expert layout editor. Silvaco has taken a careful look at the real-world obstacles faced daily by semiconductor layout designers and design engineers. Silvaco has augmented Expert with features that dramatically increase flexibility and also help to reduce constraint violations and other roadblocks inherent to complex layout design.
Recent versions of Guardian DRC introduce operations that involve edge layers, either on input or on output. An edge layer is a layer that contains line segments that are edges or parts of edges of shapes from other layers. These edges have “inner” and “outer” surfaces defined according to the shape layers they were derived from.
We introduce a platform-independent version of Guardian LVS. An important feature of any tool is its capability to operate on various platforms and to support internationalization. Now Guardian LVS is a multiplatform application operating on the following platforms: Windows, Linux and Solaris (32- and 64-bit versions).
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