TCAD Simulation of Ion Transport and Electrochemistry
This webinar will discuss the simulation of ion transport and electrochemistry in semiconductor devices. These phenomena are of interest both in cases where they are intentional, as in the design of non-volatile memories and solid-state batteries; and in cases where they are unintentional, as in a number of degradation mechanisms. The main topic will be an introduction to the new and very general facility for electrochemistry simulations that have been added to Victory Device.
What attendees will learn:
- Why and when to consider electrochemistry in semiconductor devices
- The equations solved in electrochemistry simulations
- Ion transport
- Chemical reactions
- How to set up electrochemistry simulations in Victory Device
- Definition of chemical species properties
- Initialization of species concentrations
- Specification of chemical reactions
- Output of chemical species data
- An example: Degradation in an IGZO TFT
Dr. Carl Hylin is a Senior Development Engineer in Silvaco’s TCAD Division. Since joining Silvaco in 2007, he has worked exclusively on Victory Device. In addition to the chemistry module, he is responsible for many of the trapping and radiation-damage models in Victory Device, as well as for much of the high-precision numerics.
Dr. Hylin holds an SB from MIT, an MS from the University of Illinois, and a Ph.D. from the University of Kentucky, all in mechanical engineering. He is a member of the Society for Industrial and Applied Mathematics (SIAM). His field of specialty is computational science and engineering, which he has applied to rocket engines and search engines as well as to TCAD.
When: October 25, 2017
WHO SHOULD ATTEND:
Academics, engineers, and management interested in the simulation of semiconductor devices involving ion transport, degradation, and charge-capture; including TFTs, non-volatile memories, and solid-state batteries.