Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices

During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g., Short Circuit and UIS tests). Such overload phenomena can be simulated by mixed-mode circuits and an accurate tuning of simulation parameters, thanks to simulation/experiment information exchange. This allows us to predict electrothermal behavior during a dynamic phase. As an example, we report here a study of short circuit phenomenon. The impact of a short circuit of a defect localized in active area has been investigated by means of TCAD simulations performed with Silvaco software. Different cases have been studied in which the defect dot was localized at flat interface body/drain, at SiC/oxide interface in the channel region, and at curved interface body/drain. A sensitivity with position has also been performed.

What You Will Learn

• Wide bandgap (WBG) technologies and key features of SiC
• SiC MOSFET switching operation and ruggedness
• TCAD simulations and device reliability
• Short circuit: Impact of surface defect dot

Presenter

Salvatore Cascino, SiC R&D Engineer, ST Microelectronics

Salvatore Cascino was born in Palermo (Italy) in 1970. He obtained a Degree in Physics from the University of Palermo. He was involved at ENEA (Frascati – Rome) with Nuclear Fusion Department (FTU project) and with the Fusion Research group in Padua (RFX project). He is currently at STMicroelectronics (Catania) with the R&D Group and his current research interest is aimed to technology development for Silicon Carbide devices. In the past he worked on development of devices for sensing applications and radiofrequency, too.

WHO SHOULD ATTEND:

Semiconductor Device and Process engineers, product managers, and engineering management.