Learn about Simulating Gate-All-Around Devices with Victory Atomistic

As semiconductor devices push beyond FinFETs toward Gate-All-Around (GAA) architectures, accurate modeling at the nanoscale becomes essential. Join us for an in-depth webinar showcasing how Victory Atomistic™, Silvaco’s advanced atomistic simulator, empowers researchers and engineers to explore and optimize GAA transistor performance with quantum-level precision.

In this session, we will demonstrate how atomistic simulation captures critical effects such as quantum confinement, crystal orientation, and strain and band structure engineering—phenomena that conventional TCAD tools often overlook. You’ll see how Victory Atomistic integrates with the broader Victory TCAD™ platform to deliver predictive modeling for GAA FETs, enabling faster design iterations and deeper insight into next-generation device behavior.

We will demonstrate how simulating GAA FETs becomes straightforward—even without deep academic knowledge of Non-Equilibrium Green’s function (NEGF) theory. Victory Atomistic encapsulates the complexity within a highly refined simulation engine, the result of years of advanced development. Its optimized workflows enable users to generate meaningful I-V curves in daily use, while seamless integration with the Silvaco TCAD environment ensures an intuitive transition for existing users.

What You Will Learn

• Why atomistic simulation becomes necessary at low scale
• How to set up the Victory Atomistic TCAD environment
• Simulation capabilities of Victory Atomistic
• Performances, visualization of results, and extension to other configurations

Presenter

Dr. Philippe Blaise, Senior Application Engineer, Silvaco TCAD Division

Dr. Philippe Blaise has been a senior application engineer in atomistic simulation at Silvaco’s TCAD Division for three years. Prior to joining Silvaco, Dr. Blaise was a senior engineer specialized in atomistic simulation of new memory devices and transistors at CEA/LETI for 15 years. He is a former member of the IEEE IEDM Modelling and Simulation Committee. He is co-author of more than 60 papers in peer-review journals in the field and 30 contributions to conferences and workshops, plus 5 patents and one book chapter.
Dr. Blaise holds a master’s degree in applied mathematics from ENSIMAG engineering school and a Ph.D. in solid states physics from the Université Grenoble Alpes, France.

WHO SHOULD ATTEND:

TCAD engineers and management looking for solutions to efficiently achieve ultra-fast simulations of next generation atomistic devices in advanced process geometries.