Analysis of Light Power Dependence on the Leakage Current in a Buried Hetero- Structure p-InP Semiconductor Laser
An effective device structure for reducing leakage current in BH laser diodes with semiin-sulation doped Fe in InP blocking layers has been analyzed [3]. In this study, the leakage current and light output power as a function of the leakage current path is examined. The blocking region used follows p-n-p-n structure.