February 16, 2023
In this webinar, we will share the challenges of optimizing and validating different libraries, and demonstrate how Cello, Viola, and SmartSpice contribute in a unique and dynamic way to realize fast and accurate optimization and characterization.
Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device. Silver can be started by clicking the launch button in DeckBuild.
January 26, 2023
In this webinar, we will introduce the Corner and Retargeting Module, the most recent addition to our modeling software platform, and review some of the newest models and technologies where Silvaco’s Utmost IV is a key contributor.
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will be electrically active. To address this effect, Silvaco Victory Process models dopant activation in Silicon Carbide in 3 ways.
One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in a Deckbuild loop), such as doping, stress, or layer thicknesses, to add the swept parameter to a log file. To do so, simply create a USER probe (with an optional name), and set the parameter USER on the MODELS statement to some value. This parameter (and value) will be added to the log file. The available user parameters are USER1, USER2, USER3, and USER4. The following shows a DeckBuild loop (go victoryd) to simulate the effect of varying STRESS_XX on the mobility.
September 22, 2022
In this webinar we will introduce Victory Visual, a new graphical post-processing tool for use with all Silvaco TCAD simulators and an integral part of the TCAD Victory interactive tools suite.
The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice of material is made of Si, Ge, or SiGe alloy thanks to their high carrier concentrations. In compliment to III-V technology envisaged for a while, new 2D materials are also investigated (for example, the TMDs monolayers1). Such nanomaterials and nano-architectures require atomistic simulations for at least two crucial reasons: 1) bulk parameters like the effective masses and forbidden bandgap are no longer pertinent quantities, and 2) the wave nature of charge carriers becomes predominant for predicting transport characteristics including scattering events.
September 8, 2022
In this webinar, we present how ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. We present in detail the Victory Atomistic solution for atomistic simulations.
New Features in the 2022 Baseline Release: