Quantum Modeling Part I: Poisson-Schrodinger Solver

Introduction

The trend toward smaller MOSFET devices with thinner gate oxide and greater doping is resulting in the increased importance of quantum mechanical effects, which are observed as shifts in threshold voltage and gate capacitance. Predicting these quantum effects requires solving the Schrodinger equation. This article (part 1 of a series) presents the Poisson-Schrodinger solver and its enhancements implemented in ATLAS from Silvaco. Section 2 presents the syntax used to perform the simulation. Section 3 presents the MOS-capacitor simulation results and compares them with results obtained with the University of Pisa code [1-6].