Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps
Introduction
The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication.
These properties include:
- High saturation velocities and breakdown field strength
- Direct bandgap, allowing fabrication of light emitting devices
- The ability to form hetero-structures using aluminum or indium
- Large bandgaps allowing high temperature operation
Another stand-out feature of GaN based materials are their very high levels of spontaneous and strain induced piezo-electric charge. This material feature, however, has both advantages and disadvantages.
