Learn How to Utilize Victory Analytics and Machine Learning to Calibrate TCAD Data

Abstract

Physics-based design using technology computer-aided design (TCAD) has provided fundamental contributions to R&D in the semiconductor industry. Traditionally, TCAD modeling is mostly developed manually by expert designers using a trial-and-error procedure. However, the imperative acceleration of time-to-market to reduce development expenses calls for renovation of these conventional TCAD approaches.

Machine learning (ML) and artificial intelligence (AI) techniques are currently considered to be essential enhancements for TCAD strategies. Silvaco, a prominent provider of TCAD, EDA software, and SIP solutions used to enable semiconductor design, is at the forefront in developing AI-powered TCAD.

In this webinar, an ML-TCAD combined strategy is presented to boost the calibration of TCAD parameters to benchmark TCAD simulations against experimental data. This is achieved through a seamless flow between two of the latest tools from the Victory suite: Victory Design Of Experiment (DOE) and Victory Analytics.

VDOE is a powerful project manager for efficiently running DOE with TCAD simulations. This essential step allows users to collect the TCAD outputs to be fed into Victory Analytics. Then, Victory Analytics uses ML-modeling to optimize TCAD parameters to fit the experimental data. Calibration of TCAD parameters of AlGaN/GaN HEMT will be used to showcase this procedure as a case study.

What You Will Learn

• Brief overview of TCAD calibration
• Overview of Victory TCAD tools
• Victory DoE
• Victory Analytics
• Calibration methodology using Victory Analytics and machine learning
• Overview of simulation
• Generating DoEs using Victory DoE
• Viewing and modeling results in Victory Analytics
• Optimizing parameters to fit experimental data
• Verifying results

Presenter

Dr. Stefania Carapezzi is currently a Field Applications Engineer at Silvaco France. She joined in March 2023. She obtained a PhD in Physics at University of Bologna, Italy, in 2014. Then, she was Post-Doc Researcher for several years at Advanced Research Center on Electronic System, Bologna, Italy and at LIRMM, University of Montpellier, CNRS, Montpellier, France. Her research work has been focused on TCAD simulation of Beyond CMOS devices and quantum effects in nanoscaled transistors.

WHO SHOULD ATTEND:

TCAD engineers, fab engineers, process engineers, product managers, and engineering management.