Simulation of Physical Etching in Memory Technology

This webinar will provide a deep insight into the methods, mechanisms and models to simulate physical etching with a special focus on memory technology. We will look into the simulation of very high aspect ratio narrow trench etching, which is among the key challenges in vertical non-volatile memory applications. The architecture and the modeling environment of Silvaco’s multi-dimensional process simulation tool Victory Process which embeds the physical etching capabilities will be demonstrated in detail. We will also show the flexibility of the open modeling system offered by Victory Process for adding new modeling features, which allows the engineer to optimally balance between the physical accuracy of a simulation and the simulation time requirements. On top of that, the fundamental properties of the ion enhanced chemical etching model which enables the simulation of high aspect ratio etching will be explained and analyzed and applications of it will be shown.

What attendees will learn:

• Key challenges when performing physical etching simulations especially high aspect ratio trench etching
• The architecture of Victory Process
• The concept of the open model library for etching and deposition
• The implementation and extensions of models within the open model library of Victory Process
• The properties and behavior of the ion enhanced chemical etching model which is used for high aspect ratio narrow trench etching
• Applications such as
  • high aspect ratio etching in 3D NAND
  • optimization of magnetic tunnel junction pillars in STT-MRAM

Presenter

Dr. Andreas Hössinger is product manager within Silvaco’s TCAD Division. He is in charge of process simulation tool development including model development, numerical R&D as well as the implementation of new applications. Prior to joining Silvaco, Dr. Andreas Hössinger held a senior research position at the Vienna University of Technology, where he developed models, algorithms and methods for three-dimensional process simulation.

Dr. Andreas Hössinger holds a MS in physics and a PhD in electrical engineering for the Vienna University of Technology, Austria.