3D TCAD Simulation for Power Devices
y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today we see SOCs running under a 1V supply voltage, but there is a totally different market for power devices that are at the other end of the voltage spectrum and they handle switching ranges from 12V – 250V. To learn more about power devices and how the process and device modeling is done, I read a Silvaco publication entitled Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET.
Where Circuit Simulation Model Files Come From
I started out my engineering career by doing transistor-level circuit design and we used a proprietary SPICE circuit simulator. One thing that I quickly realized was that the accuracy of my circuit simulations depended entirely on the model files and parasitics. Here we are 40 years later and the accuracy of SPICE circuit simulations still depend on the model files and parasitics, but with the added task of using 3D field solvers to get accurate parasitic values, and even the use of 3D TCAD tools to model the complex physics of nm IC designs using FinFET transistors.
230 Papers on Power Device Simulations using Silvaco TCAD
A quick search of the IEEE Xplore online library gives a list of more than 230 published technical articles on Power Device Simulation using Silvaco TCAD. Here are some recent papers with the authors’ abstracts that cover silicon-carbide (SiC) and Junction-Less Double Gate MOSFET devices. Any mention of ‘we’ or ‘our’ refers to the paper’s authors:
Advanced Materials and New Architectures for AI Applications
Over the past 50 years in our industry, there have been three invariant principles:Moore’s Law drives the pace of Si technology scaling
system memory utilizes MOS devices (for SRAM and DRAM)
computation relies upon the “von Neumann” architecture
Talking Atoms to Systems in Next-Generation SoC Designs
New system-on-chip (SoC) devices are driving new memory architectures and photonic interfaces, while specialized new intellectual property (IP) requires analysis down to the nanometer and atomic levels because of single nanometer process nodes. According to Babak Taheri, CTO and EVP of products at Silvaco, a leading EDA Software, semiconductor IP company, a member of SEMI and the ESD Alliance, a SEMI Strategic Association Partner, design technology co-optimization and proven IP are required for this analysis.
Simulation and Analysis of Liquid Crystal on Silicon Pixels for Augmented Reality and Holography Applications
July 24, 2019
Since its invention in the early 1970s, liquid crystal on silicon (LCoS) technology has proven its success in a wide range of fields such as displays, adaptive optics, lithography and telecommunications. In this webinar, we will show the way of analyzing a phase-only LCoS-SLM using the simulation tool Clever LCD. Specifically, issues arising in driving the pixels and in shrinking the pixel size will be presented.
Silvaco TCAD: Introduction and the Basics – A Tutorial in 3 Parts
In this 3-part webinar series, viewers will be introduced to the suite of Silvaco TCAD software, and offered starter training and tutorial. The series will allow them to approach the complexity of suing TCAD from a good starting point and to learn quickly and confidently how to achieve successful TCAD simulation
Inventing the Future of MicroLED: Silvaco TCAD
Silvaco did Executive Video Interviews at our booth in the middle of the show floor at Display Week 2019 in San Jose. We interviewed industry experts on what they expected for the Display industry in 2019 and what technical challenges that needed to be met.
Device Simulation of Oxide Semiconductor TFTs: Device Modeling and Self-Heating Effects
May 22, 2018
This webinar shows how to use Silvaco simulators for OS TFT device simulation. The carrier-electron transport and electronic states of OSs are reflected in the mobility model and DOS (density of subgap states) distribution.