It is well-known that parasitic effects are no longer negligible for modern integrated circuit technology. Among the most important parasitic effects limiting the chip performance are interconnect related problems like extensive signal delays and crosstalk. The main numeric problem is extraction of parasitic capacitance, because it is a more complicated task than resistance extraction. The latest codes use directly 3D electrostatic solvers for this purpose. But the disadvantage of such approach is prohibitively long solution time for the problem. So the simplest model of 3D structures, when layout is splitted to 2D small pieces, can be used when it is necessary to handle complete IC's in a reasonable amount of time.

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the dopant and the free point defects, taking into account their various charge states. In addition to, and fully coupled with the dopant diffusion we model the growth and dissolution of the interstitials and boron interstitials clusters associated with the anneal of the self-interstitial supersaturation created by the implantation step. It is thus possible to simulate a rather large set of experimental conditions, from conventional predeposition steps, to RTA after low energy implantation.

ATLAS allows the user to define a contact with a number of different boundary conditions; ohmic, Schottky, current controlled, floating or reflecting. The Schottky contact boundary condition realizes that at the metal semiconductor interface a barrier exists due to the presence of interface states.