日志 Erick Castellon

Atomistic Analysis and Next Generation Computing at IEDM 2019

18 12 月, 2019 在： /通过：

IEDM is THE device conference with more than a thousand participants from major companies and R&D institutes. Many talks were dedicated to new memory devices and circuits, including Ferroelectrics, MRAM, RRAM, driven by the requirements of AI processing. EUV is definitely there for 3nm and beyond. 3D integration was shown for LP-HP logic and RF. Gate-All-Around devices, with nanowires or nanosheets are mature versus FinFET.

Silvaco Exhibits and Presents Invited Paper on Atomistic Simulation at IEDM 2019

19 11 月, 2019 在： /通过：

The IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. It is the flagship conference for

Nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices
Novel quantum and nano-scale devices and phenomenology
Optoelectronics, devices for power and energy harvesting, high-speed devices
Process technology and device modeling and simulation

Next Generation CMOS Nanowire: From Atoms to Circuit Simulation

5 9 月, 2019 在： /通过：

Abstract— A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have been fitted to an active device SPICE compact model, specifically formulated for nanowire/Gate all around Field Effect Transistors” (FETs). Finally, the active devices were incorporated into a SPICE netlist including back end resistance and capacitance parasitics.

Optimization of Select Gate Transistor in Advanced 3D NAND Memory Cell

4 9 月, 2019 在： /通过：

Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it needs to provide enough current during read and erase operation. In this paper, we examined the design optimization of select gate transistor with respect to various device elements including work-function, S/D overlap, and trap density. Finally, we reviewed the path to reduce the channel length of the select gate transistor in conjunction with the role of dummy cells.