Power Devices Solution
“By using Silvaco’s advanced TCAD solutions,
our teams can explore, understand, and optimize
the performance of GaN devices with greater depth
and efficiency.”
Michael Mensing, Ph.D,
Head of the Advanced Devices Group
Fraunhofer ISIT
Wide-bandgap Gallium Nitride and Silicon Carbide materials are transforming Power Semiconductors.
Silvaco's tailor-made power device flow is transforming how our customers innovate, differentiate,
and reduce time-to-market for the world’s next generation of Power Devices from process to layout.
“Silvaco’s Victory TCAD platform gives us the
ability to precisely model GaN device behavior
in real world conditions.”
Dr. Barry Lin, CTO
Wavetek
“With Silvaco’s prompt and expert technical
support, and unique tool features specifically
tailored for power devices design, we were able
to quickly adopt new capabilities…”
Mike Robinson, CEO
SemiQ
“The integration of Silvaco’s end-to-end DTCO
platform provides a unified environment to simulate,
characterize, and optimize power devices, from
process through circuit.”
Dumitru Sdrulla, CTO
Analog Power Conversion
Wide-Bandgap Proven
Support for SiC and GaN technologies, with accurate physical modeling, validated material libraries, and simulation and extraction support for three GaN compact models.
Accelerated Time to Market
Reduce prototype iterations through simulation-driven design, helping you get to production faster. Go beyond Design Technology Co-Optimization (DTCO) with Silvaco‘s Fab Technology Co-OptimizationTM (FTCOTM) solution enabling Digital Twin Technology.
Tailor-Made Power Device Flow
From layout and process simulation to compact modeling and verification — everything you need to design power devices, all in one platform.
Modular Flexibility
Use the complete flow or select only the tools you need — Silvaco adapts to your design strategy and resource constraints.
Customization Support
Tailor simulation models, flows, and tool chains to your specific technology or development goals, with expert support along the way.
GaN Specific
Victory TCADTM tools include GaN specific features such as:
- Polarization and piezoelectric modeling with composition-dependent band bowing
- Advanced trap and defect models for interface and bulk reliability
- GaN and Nitride-specific low- and high-field mobility with negative differential mobility
- Leakage mechanisms including phonon-assisted tunneling, variable-range hopping, and hot-carrier injection
All Technologies
- Victory Mesh efficient meshing for large devices
- Expert is a powerful layout editor for creating, managing, and replicating rounded and complex geometries, with user-friendly and powerful scripting built in
- SmartDRC is a perfect complement to Expert. It is quite adept at avoiding false errors with complex, and rounded gemoetries, while still capturing real design rule violations
SiC Specific
Victory TCADTM tools include 4H-SiC specific features such as:
- Robust and accurate 3D anisotropic oxidation modeling
- Anisotropic impact ionization and two-level mobility models for accurate high-field behavior
- Advanced trap and defect models for interface state and reliability analysis
- Well-calibrated Monte Carlo implantation and activation models for Al, B, P, N
Featured Power Solutions Content
