阻抗场与低信号噪声

低信号电气噪声不可避免，其成因在于器件内部过程的随机波动，例如热波动导致的载流子密度微观变化，以及产生-复合速率的统计波动。 此类噪声可能干扰电路预期行为，因此建模器件产生的噪声至关重要。了解噪声在器件中的具体产生位置亦具有重要意义，这有助于设计低噪声器件。Victory Device采用阻抗场法进行噪声计算。

在 Victory Process 的蒙特卡洛离子注入中使用 Trajectory Replication

Victory Process中的蒙特卡洛离子注入是固体结构的工艺仿真中实现物理上精确的浓度分布的重要工具。该蒙特卡洛算法通过模拟粒子从注入窗口进入用户所定义的结构后的运动路径进行建模工作。粒子在结构内移动时，通过与材料相互作用不断损失能量，直至停止运动或发生背散射。要获得统计波动较小且浓度分布连续（平滑）的结果，通常需要耗费大量计算时间。Trajectory Replication的目标是通过将粒子在结构某区域的运动路径复制到其他区域，在保持浓度分布平滑度的同时有效减少总体计算时间。为实现物理上精确的结果，复制操作必须满足明确定义的条件，本文将对相关条件进行阐述。在具体介绍复现流程的细节之前，我们将先讨论蒙特卡洛离子注入程序中的若干重要概念。

A New CMOS Simulation Template: Addressing Advanced Diffusion and Annealing Effects

As the scaling of CMOS devices continues, the accuracy requirements for simulating ion implantation and diffusion processes have become increasingly stringent.

虚拟量测新工具简介：Victory Extract

Victory Extract是Silvaco在2024基准版本软件中推出的一个新工具，它统一了几款软件中的提取工具（DeckBuild的extract、Victory Process的extract3d和Victory Mesh的extract3d），并引入了一些新的量测功能。

基于双脉冲法的IGBT开关仿真

我们将在本期为您介绍一种基于DPT的仿真方法，来研究IGBT器件的瞬态开关特性。文章还提供了一套使用Silvaco TCAD仿真工具评估功率器件开关特的标准模板和方法，所用的仿真代码可参考2024基准版本的示例Silicon_Power_ex17。
Sim Std Aug 2024

2024 TCAD基准版本软件发布

  • 第一部分：Victory Process——2024基准版本中的新功能
  • 第二部分：Victory Device——2024基准版本中的新功能
  • 第三部分：Victory DoE——2024基准版本中的新功能

How Can I Re-Use Individual Monte-Carlo 3D Implant Profiles?

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device.  Sometimes this simply means tweaking the implant dose for threshold voltage or other minor adjustments, but in other cases it can mean tweaking such things as high energy deep well implants.

Comparison of Models for Fluorine Effect on Dopant Diffusion in CMOS Processes

Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such as steep temperature ramps, short annealings or shallow implantations.
SS April 2023

Setting up the Wafer Orientation: Applications to Ion Implantation

Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the wafer orientation becomes crucial, given its profound impact on profile variations in channeling and non-channeling directions.

Optoelectronic Component Design for Photonic Integrated Circuits

Photonic integrated circuits (PICs) are a key enabling technology for a broad range of current and next-generation products. Combining semiconductor materials and manufacturing processes common to microelectronics with the encoding, transmission and detection of light, PICs are transforming communication in datacenters by bringing bandwidth closer to compute cores, and are accelerating emerging applications like LiDAR for autonomy and quantum computing for the future of information processing.