The traditional Noise models in SPICE used two parameters (AF and KF) to model the noise level and the frequency dependency of flicker noise in MOS devices. There are three different standard models and they can be activated using the noise level selector parameter NLEV in SPICE.
Following the log file conversion tool for TonyPlot introduced with UTMOST 12.3.14.R1, new file formats have been added to UTMOST III’s printing and plotting options to make manipulating UTMOST generated data even easier.
The latest Berkeley BSIM3v3.2 model of June 16 1998 has been integrated into SmartSpice 1.5.5. The Silvaco implementation of the Berkeley BSIM3v3.2 model can be invoked by specifying the model selector LEVEL=8 and the version selector VERSION=3.2 in the .MODEL definition. This version is now used as the default BSIM3v3 model. Older BSIM3v3 models can be invoked by specifying VERSION=3.0 or VERSION=3.1.
Silvaco now offers the EKV (ENZ, KRUMMENACHER, VITTOZ) MOSFET model version 2.6 originally developed in EPFL (“Ecole Polytechnique Federale de Lausanne” – Switzerland), as part of the SmartLib product-independent model library. This model is available within SmartSpice and UTMOST as level 44.
The latest Berkeley BSIM3v3.2 model of June 16 1998 is now available in the SmartSpice 1.5.5 release.
Two BSIM3v3.2 implementations are supported in SmartSpice and UTMOST III.
Q: Can I draw tangents to circles in EXPERT?
A: Expert supports several options for drawing sophisticated shapes. There are three ways to accomplish this task.
Placement and routing problems for integrated circuits are inherently interrelated and extremely complex from the algorithmic point of view. This complexity grows exponentially as the scale of integration increases.
Maverick is a modern hierarchical netlist extractor, providing extraordinary efficiency as well as comprehensive features and ease of use. It runs on PC under Microsoft Windows NT providing unique productivity in processing of virtually any size VLSI/ULSI designs.
How can anti-reflective coatings be modeled when simulating photodetectors in ATLAS/Luminous? How can detection efficiency be plotted?
This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration.