How Silvaco TCAD is at the Heart of Innovation in RF Devices
At high frequency, the accurate modelling of parasitic elements is crucial to IC design. Substrate behavior is a significant contributor to such parasitics, and its modelling is a challenge, not only under small-signal conditions due to strongly non-uniform resistivity profiles in semiconductor materials, but especially under large-amplitude excitations.
In this work, Silvaco’s TCAD Victory Device simulation tool is used to model both small- and large-signal behavior of various types of silicon-based substrates. The developed models are heavily based in material semiconductor physics, and the physical charge-balance interplay is rigorously studied, shedding light on the inner workings of a wide range of silicon-based substrates under both quasi-static and strong non-equilibrium transient conditions.
In particular, the developed large-signal modelling scheme is demonstrated to be stable, i.e., to converge in both space and time, and to correlate well to a wide set of measurement data from over 20 different silicon-based substrates.
What You Will Learn
- How to model behavior of various types of silicon-based advanced substrates
- How to study physical charge-balance interplay
- Inner workings of silicon-based substrates under both quasi-static and strong non-equilibrium transient conditions
- Developing large-signal modeling schemes