Michael Uren is Research Professor in the Centre for Device Thermography and Reliability at the University of Bristol, UK, and has now accumulated more than 40 years device physics experience. He acquired his MA and PhD in Physics at the University of Cambridge on electron transport in Si MOSFETs, followed by a postdoc at IBM, Yorktown Heights, USA. He worked at RSRE Malvern, UK (now QinetiQ) on SOI CMOS, random telegraph and 1/f noise, and interface trapping. Later he successfully implemented SiC RF power MESFET, GaN S-band and X-band MMIC processes. He moved to Bristol in 2011 to join Professor Martin Kuball’s team where he has led the device electrical research on GaN, and Ga2O3 devices. His recent interests have focused on the understanding of the role of epitaxy on device performance.