How to Use Device Simulation as a Tool for Understanding GaN HEMTs
Gallium Nitride based devices are highly attractive for both RF and power switching applications due to a combination of outstanding materials properties. However, although the basic principles are well understood and can now be accurately reproduced in device simulators, there are many important aspects that are still poorly understood and the subject of continuing active research.
This talk will illustrate with some specific published examples of how device simulation can be a powerful tool to help explain complex performance limiting device instabilities in both RF and power devices. Particular focus is placed on dynamic Ron in GaN-on-Si power switches, persistent photoconductivity in GaN HEMT epitaxy, and transconductance dispersion in iron doped GaN HEMTs.
What You Will Learn
- What are GaN HEMTs and where are they used
- Why is a buffer layer is needed
- Understanding GaN-on-Si Power switching buffers
- Persistent Photoconductivity in GaN HEMT epitaxy
- RF GaN-on-SiC HEMT transconductance dispersion
Michael Uren is Research Professor in the Centre for Device Thermography and Reliability at the University of Bristol, UK, and has now accumulated more than 40 years device physics experience. He acquired his MA and PhD in Physics at the University of Cambridge on electron transport in Si MOSFETs, followed by a postdoc at IBM, Yorktown Heights, USA. He worked at RSRE Malvern, UK (now QinetiQ) on SOI CMOS, random telegraph and 1/f noise, and interface trapping. Later he successfully implemented SiC RF power MESFET, GaN S-band and X-band MMIC processes. He moved to Bristol in 2011 to join Professor Martin Kuball’s team where he has led the device electrical research on GaN, and Ga2O3 devices. His recent interests have focused on the understanding of the role of epitaxy on device performance.
WHO SHOULD ATTEND:
IP, Device, Circuit, CAD, SoC and System design engineers, product managers and engineering management.
When: February 24, 2022