日志 Ingrid Schwarz

3D SOI NMOSFET Simulation Using VICTORY DEVICE

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to supply the device with a body contact. With a body contact, however, the geometry of the device becomes fully three dimensional. In this paper, we show how an SOI MOSFET with a body contact can be simulated in VICTORY DEVICE. 3D visualizations from the VICTORY DEVICE results illustrate how the body contact acts to suppress the kink effect.

Crosstalk Simulation in InSb Detector Arrays

Crosstalk is one of the main parameters that critically affect the resolution of detector arrays. It results in a reduction in image clarity, thus degrading system performance. There are two type of crosstalk; optical crosstalk and electrical crosstalk. Optical crosstalk includes the effect of photon refraction, reflection at boundaries, and external and internal scattering in detector arrays. Electrical crosstalk is attributed to carriers that are photogenerated under one detector, diffusing and being collected by another detector in the array.

Simulating the Effects of Stress/Strain on a 50 nm Silicon FinFET

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials [1]. Large strain induced gains in both electron and hole mobilities have been reported [2][3]. In this article, we will show how SILVACO tools can be used to simulate the creation of a 3D FinFET using VICTORY CELL, calculate the internal strains using VICTORY STRESS, and analyze its electrical characteristics using VICTORY DEVICE.

Evaluating of the Breakdown Voltage of the Super-Junctions Using ATLAS

High Voltage Power Devices using super junction or multi RESURF effect have a relatively high BV with a drastic reduction in the on-state resistance (Ron)[1-2]. Several Techniques such as buried multi-epitaxial growth[3], Super Trench Power MOSFET process[4], Vapor Phase Doping[5] and trench filling epitaxial Si growth[6], have been applied to formation of the high aspect ratio p/n column structures. In blocking mode, the adjacent N- and P- regions deplete into each other laterally. For this junction, the process simulation was considered with several implant ionization process steps[3]. The condition of exact charge balance is important in obtaining the stable high Breakdown Voltage (BV).

Hints, Tips and Solutions – Visualizing Drift and Diffusion Current Densities

One of the most important features of TCAD simulation is that the TCAD tools encapsulate the physics of the processes or devices being studied. For the user, this can develop and reinforce an intuitive understanding. In device physics, it can be very helpful to be able to look at the different components of current density. Sze1 presented a nice example of the difference between drift and diffusion currents, based on the Haynes-Schockley experiment2. This note shows simulation results of the Haynes-Schockley experiment using ATLAS with Luminous.

Simulating SiGe and Impurity Dependent Stress

The simulation of stress during device fabrication is becoming increasingly important and is often now deliberately introduced during fabrication to enhance device performance. The induced stress can take the form of deposited amorphous materials, such as silicon nitride or can be induced epitaxially by the growth of silicon germanium (SiGe) for example.

Physical 3D Single Event Upset Simulation of a SRAM Cell with VICTORY DEVICE and SmartSpice

VICTORY DEVICE simulation framework includes tools for 1D, 2D and 3D simulation of modern semiconductor technologies. VICTORY DEVICE implements a full tetrahedral meshing engine for fast and accurate simulation of complex 3D geometries. Built in and user defined mesh refinement criteria can be used for customization of the mesh during a simulation. This is the case for Single Event Upset (SEU) simulation. The simulation of SEU phenomena in 3D structures is highly complicated due to the presence of large gradients in physical quantities near the SEU track. In order to perform accurate and stable simulations of SEU strikes in 3D structures, it is essential to have fairly dense mesh near the center of the SEU track while maintaining a coarser mesh far from the track for efficiency. The aim of this paper is to illustrate how a SRAM cell subject to SEU can be accurately simulated.