• Simulation Standard Technical Journal

Simulation Standard

Technical Journal

A Journal for Process and Device Engineers

Is it possible to calculate the resistance components of a MOSFET

Q. Is it possible to calculate the resistance components of a MOSFET (i.e. channel resistance, epi resistance, substrate resistance etc.) as a function of gate bias?

Design Rules and Trends for Dummy Metal Filling Using Exact, Clever and Stellar

IntroductionThe physical verification is becoming the most complex phase raised by the Deep SubMicron (DSM) technology. More than 50% of the design time is dedicated to the verification. With the shrink of transistors size, the interconnect delay is dominant versus gate delay. Hence the challenge in the DSM technology depends primarily on how to provide accurate characterization of these interconnects. This is especially the case when dummy metals are present.

Advanced Quantum Effects Simulation in Atlas

IntroductionThe trend toward smaller MOSFET devices with thinner gate oxide and greater doping is resulting in the increased importance of quantum mechanical effects, which are observed as shifts in threshold voltage and gate capacitance. Predicting these quantum effects requires solving the Schrodinger equation. This article presents the Poisson-Schrodinger solver and recent enhancements implemented in ATLAS from Silvaco.

TCAD Simulation of a SONOS Device with Silvaco’s new FNONOS Model

IntroductionErasable programmable read-only memory (EPROM) devices include amongst others, floating gate technology and SONOS (Polysilicon-Oxide-Nitride-Silicon) technology. Floating gate technology involves charge being stored in the polysilicon floating gate as a continuous spatial distribution of free carriers in the conduction band. In contrast, SONOS gate stack structures involve charge being stored in spatially isolated deep level traps within the nitride layer.

How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena/Elite?

How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena/Elite?

Three Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes

AbstractImprovement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. In this article, the thermal characteristics of GaN LEDs have been analyzed by using the ATLAS three dimensional thermal conduction model and thermal heat model. Maximum operation temperature has also been calculated. It was shown that the distribution of lattice temperature using the conventional structure.