• Simulation Standard Technical Journal

Simulation Standard

Technical Journal

A Journal for Process and Device Engineers

Evaluating of the Avalanche Failure of Power MOSFETs using Atlas

IntroductionPower MOSFETs are widely used with an inductive load for S/W power supplies, DC-DC converters, and so on. But due to high frequency operation, the surge voltage applied to the MOSFETs at turn-off depends on the inductance and parasitic inductance in the circuit. For some operation modes, the pulse width for the turn-on or off will be very short, and the device fails due to the short surge period.

Comparison of 3-Dimensional Quantum Effects in Nano Devices Using the Atlas 3D BQP Model

IntroductionWith the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.

Enhanced Silicon Light Emission Intensity with Multiple SiGe Quantum Well Structure

AbstractThe measured I-V curve from a ten period Si/SiGe MQW pin LED fabricated using a UHVCVD system is compared with ATLAS simulation results. A sizable silicon emission peak is observed at high current injection mode at room temperature. This phenomena can be explained as follows: because of the hetero-junction between the top silicon buffer layer and MQW, when bias increases there is a potential barrier formed due to band bending. Thus there will be a large accumulation of holes in the buffer layer. The recombination rate in this layer increases which results in increased silicon light intensity.

Multi-layer Organic Light Emitting Diode Simulation

A conventional 2 layer organic light emitting diode consists of a Hole Ttransport Layer (HTL) and an electron transport layer (ETL). A good OLED structure requires sufficient carrier injection so that large exciton density is generated when the carriers recombine. However, a 2-layer OLED structure has a low injection current due to the poor metal/organic material interface and therefore has a low device output efficiency. The electron injection current can be increased by using a different cathode material such as LiF/Al. Unfortunately, LiF/Al metal processing is hard to control and is very sensitive to processing conditions. Also, hole injection is limited by the ITO anode which has a large metal/organic barrier.

Crosstalk Between Pixels of Organic Photo-Voltaic Devices

For various technological reasons, LEDs and as well as photo-voltaic devices frequently use PEDOT:PSS on top of ITO contacts as a hole injecting or hole collecting layer, respectively. However, due to the presence of this layer, a direct parasitic current path opens up between the ITO contacts of neighboring pixels.

Athena/Optolith Simulation of Proximity Lithography

Photolithography simulation is a very important part of TCAD. Accurate and predictive lithography simulation saves time and money spent on development and calibration of semiconductor technology processes.