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マルチスケール・シミュレーション・フローにより有機ELの製作時間、コストを削減
本ウェビナーでは、このギャップを埋めて、微視的な分子特性がデバイス性能に与える影響の解析を可能とする、微視的シミュレーションからTCADシミュレーションまでの自動インタフェース・フローをご紹介します。
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TCAD Simulations of RF-SOI Switches with Trap-Rich Substrate
The market for cellular components has been shifting rapidly from GaAs pHEMT or silicon-on-sapphire (SOS) to silicon-based technology. CMOS (silicon-on-insulator) SOI antenna switches which are compatible with multimode GSM/EDGE, TD/WCDMA, and LTE systems exhibit higher integration levels and have become the fastest growing mobile phone submarket. CMOS-SOI processes, especially with thin silicon, have the potential to rival the FoM that was traditionally feasible only with GaAs technologies.
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