Introduction

Gallium nitride (GaN)-based devices are excellent candidates for high-voltage and high-power applications, due to the superior physical properties of GaN compared to Si, SiC, and GaAs. Recently, GaN vertical devices have attracted increased attention, due to their advantages over GaN lateral devices, including high breakdown voltage (BV) and current capability for a given chip size, and superior thermal performance.1 Recent demonstrations of high-performance vertical GaN diodes2–4 and transistors5–9 have made vertical structures very promising for GaN power devices.

Abstract — Dual junction solar cells were simulated using Silvaco TCAD tool with various tunnel junction material compositions. InGaP/GaAs dual junction solar cells were simulated with 10 different tunnel junction combinations. The highest efficiencies were from InGaP/AlGaAs and InGaP/InGaP tunnel junctions at 31.82% and 31.75%. InGaP/CdTe solar cells were also simulated with four different tunnel junction combinations. InGaP/InGaP tunnel junction was found to be most efficient with 37.29% which is consistent with experimental data. Three of four InGaP/CdTe dual junction solar cells were simulated to have higher efficiency values than all InGaP/GaAs solar cells.

The 2019 TCAD baseline release of Victory Mesh now contains Solid Modeling functionality. The term Solid Modeling is used to refer to a methodology that generates or manipulates a device via geometrical operations, for example, bending, mirroring and joining or insertion.

DeckBuild is Silvaco’s state of the art simulator interface. It is capable of running all simulators from Silvaco as well as many of the visualization tools. Figure 4-1 shows an overview where a simulation was successfully finished and the results can be inspected. Values that were extracted from a structure file are shown in the top right part of the window.