エントリー - Erick Castellon

Quantum Dot-Based Hybrid Light Emitting Diode Modelling Using Radiant

1月 1, 2019 カテゴリ: /作成者:

Introduction

With the recently launched Radiant, a graphical user interface (GUI) for Atlas-based TCAD simulations, the entry barrier for inexperienced users has been lowered. In particular, the use of guided simulation tools, for both experienced and novice researchers, can speed up the development cycle. Light emitting diodes (LEDs) have caught the attention of the scientific community for many years, especially organic-based light emitting diodes (OLEDs) and the emerging quantum dot-based light emitting diodes (QD-LEDs).

Verification of an Compact Model for Organic Thin-Film-Transistors by Using MixedMode Creating an CMOS Inverter Circuit with TCAD Transistor Devices

1月 1, 2019 カテゴリ: /作成者:

Organic thin-film transistors (OTFTs) are promising devices for future low-cost electronics[1][2]. However, to enable the development of this technology, circuit design simulation is needed. TCAD with MixedMode approach provides a suitable route for the physics based simulation of these transistors within simple circuits. As circuits become more complicated, more devices are needed and the computing time increases significantly. Compact models describe the behavior of the device with only a few equations and thus the computing time is reduced to a viable magnitude. Such equations are written down in a Verilog-A format which can be used by most SPICE simulators.

Hints, Tips and Solutions – Movie and PDF Report Generation with the DeckBuild GUI

1月 1, 2019 カテゴリ: /作成者:

Introduction

In this article we will emphasize two new features of the DeckBuild deck editing environment. These are the movie creation on the one hand and the creation of PDF reports on the other. The latest version of DeckBuild allows you to use recorded history points to prepare movies and PDF reports of a simulation flow. We will start by first illustrating the basic history creation and script execution mechanism, followed by pointing out the creation of movies. After that, we will demonstrate how to create a customized PDF report out of your simulation flow.

Ballistic Quantum Transport in Nanoscale Transistors: a Non Equilibrium Green’s Function Approach

11月 1, 2007 カテゴリ: /作成者:

Introduction

As MOS field-effect transistors are scaled down to a nanometer regime, quantum effects in both transverse and transport directions start playing a major role in determining device characteristics. In order to address a new challenge, SILVACO has started a deployment of new quantum mechanical models based on Non Equilibrium Green’s Function (NEGF) approach. This is a fully quantum mechanical approach which treats such effects as source-to-drain tunneling, ballistic transport, and quantum confinement on equal footing. The new NEGF solver is suitable to model ballistic quantum transport in such devices as Double Gate or Surround Gate MOSFET, using rectangular or cylindrical geometries in ATLAS. The method used is based on references [1] and [2].

A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation

11月 1, 2007 カテゴリ: /作成者:

Abstract

The paper presents a new approach to three-dimensional semiconductor process simulation that overcomes the problem of moving boundaries and mesh generation. Contrary to using unstructured meshes, the approach makes use of the level set method on fixed Cartesian meshes. A concept of multi-layer structure is introduced to capture an arbitrary complex structure. To handle a big geometrical scale ratio in a structure, the concept of adaptive mesh refinement is used. A special in-house finite-difference scheme is designed to approximate the relevant equations near material interfaces. In the bulk of regular nodes the standard finite difference schemes are used. Application of the approach to the modeling of oxidation of some typical types of structures used in semiconductor technology is demonstrated.

Simulation of an Organic Photovoltaic Cell (OPC) Using Atlas

8月 1, 2007 カテゴリ: /作成者:

Introduction

In recent years, the investigation of Organic Light Emitting Diodes (OLEDs) and photovoltaic devices based on small organic molecules and polymers has attracted significant interest due to their potential for inexpensively generated electricity. ATLAS has been used already to investigate OLEDs [1] and compound material GaInP[2][3] devices.

Two-Dimensional Atlas Device Simulation of an Organic Light-Emitting Field-Effect Transistor Using a Heterostructure Inside the Transistor Channel

8月 1, 2007 カテゴリ: /作成者:

1. Introduction

Organic semiconductors have been incorporated in a wide range of devices, including organic thin-film transistors (OTFTs) and circuits, organic solar cells, organic non-volatile memories and organic light-emitting diodes (OLEDs). Display applications are a particularly important driver for the further development of this organic technology.

Electrical Stress Degradation of Small-Grain Polysilicon Thin-Film Transistors

5月 1, 2007 カテゴリ: /作成者:

Abstract

This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states.

Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices

5月 1, 2007 カテゴリ: /作成者:

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain–current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and drain-lag turn-on measurements are analyzed, revealing clear mechanisms of current collapse and related dispersion effects. Numerical 2-D transient simulations considering surface traps effects in a physical HEMT model have also been carried out.

New Feature of Quantum Module: Schrödinger-Poisson Solver for Nanowire Application

5月 1, 2007 カテゴリ: /作成者:

Introduction
The trend toward ultra-short gate length MOSFET requires a more and more effective control of the channel by the gate leading to new architecture like double-gate, tri-gate, omega-gate, and four-gate (or gate-all-around) MOSFETs. Recent advances in nanoscale fabrication techniques have shown that semiconductor nanowires are becoming promising candidates for next generation technologies. In particular, silicon nanowire transistors have been demonstrated by several research groups with cross-sectional dimensions in the range of several nanometers.