TCAD-based Model Extraction Flow for GaN HEMT Devices – Part 2
This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include generating I-V and C-V data through TCAD device simulations. Asymmetric vs. symmetric device structures are considered. The extraction of SPICE model I-V and capacitance parameters will be illustrated in detail, with emphasis on asymmetric devices.
What attendees will learn:
- Asymmetric vs. symmetric device GaN HEMT structures
- Generating I-V and capacitance data using TCAD device simulation
- I-V and C-V data conversion for parameter extraction
- Extraction of SPICE model parameters for GaN HEMT devices
- Parameter extraction of asymmetric devices
- I-V modeling
- Capacitance modeling
- Flow description
- Running the flow and illustrating the results
Presenter
Dr. Bogdan Tudor is Head of Silvaco’s Device Characterization Group. He is responsible for all aspects of the Device Characterization Group’s activities, including R&D, field operations and modeling services. He joined Silvaco in 2017. Prior to joining Silvaco, Dr. Tudor has been a Principal Software Architect at ProPlus Design Solutions for 4 years and before that he was a Senior R&D Engineer with Synopsys for 12 years. Dr. Tudor has an extensive expertise in Device characterization, Compact Model development, MOSFET Aging Reliability Analysis and Software development.
Dr. Tudor holds a MS in Electrical Engineering and a Ph.D. in Microelectronics from the Polytechnic University in Bucharest, Romania.
When: March 26, 2019
Where: Online
Time: 10:00am-11:00am-(PST)
Language: English
WHO SHOULD ATTEND:
Academics, engineers, and management who are interested in the modeling and characterization of GaN HEMT devices and in DTCO TCAD to SPICE methodology, in general.