Silvaco at Upcoming Solid-State Conferences: ESSDERC 2020 and SISPAD 2020

Silvaco technologists and research partners will be participating in the ESSDERC/ESSCIRC 2020 joint conference for solid-state devices and circuits.  Tutorial #8, Ab-initio simulations supporting new materials & process developments, chaired by Denis Rideau (STMicroelectronics) and Philippe Blaise (Silvaco), includes a presentation by Dr. Tillmann Kubis of Purdue University. Dr. Kubis is working with Silvaco in the area of atomistic simulation.  He will present on  Atomistic Green’s functions: the beauty of self-energies. All conference content is available online from September 7 through October 16.

The tutorial will introduce atomistic methods such as Density Functional Theory (DFT), Molecular Dynamics (MD) and Non-Equilibrium Green’s Functions (NEGF). Novel simulation techniques to determine atomistic details of bulk and device properties will be addressed, with special emphasis on applications to materials for nano/opto electronics. The tutorial will explore the potentialities of atomistic methods in predicting the physics of these new materials and structures, including defects and their electrical and optical properties, but will also discuss how to bridge the results of simulations with experiments and spectroscopic signatures.

The following is the abstract for Dr. Kubis’s talk on Atomistic Green’s functions: the beauty of self-energies:

The value of nonequilibrium Green’s function (NEGF) implementations stands and falls with the quality of its self-energies. This presentation gives an introduction to NEGF. It will be explained how self-energies cause NEGF to fundamentally differ from most other quantum methods. Atomistic examples of phonon and impurity scattering self-energies agree quantitatively with experiments. The latest development in NEGF, the ROBIN method, overcomes notorious shortcomings of periodic boundary conditions in defect and disordered material simulations.

Silvaco technologists and research partners will be participating in the SISPAD 2020 conference for simulation of semiconductor processes and devices.  There will be four talks divided across three sessions. All content will be presented online. Session 3 content is available from Sept. 23 to Sept. 28.  Sessions 10 and 11 content is available from Sept. 28 to Oct. 3.

Session 3: Computational Methodology 

#3-2: “Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD” by A. Scharinger, P. Manstetten, J. Weinbub, from TU Wien Austria and by A. Hossinger from Silvaco Europe U.K.

Session 10: Non-Volatile Memory II ReRAM and MRAM

#10-4: “Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling” by S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, V. Sverdlov from TU Wien, Austria and by W. Goes from Silvaco Europe U.K.

#10-5: “Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells” by J. Ender1, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr from TU Wien, Austria and by V. Sverdlov from Silvaco Europe U.K.

Session 11: High Speed Switching Devices and Noise

#11-9: “Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below” by P. Blaise, U. Kapoor, M. Townsend, E. Guichard from Silvaco, USA and by J. Charles, D. A. Lemus, T. Kubis from Purdue University.