PHILIPS Model 9 New MM9 Extraction Routine in UTMOST III

Part II

Introduction

This is the continuation of the same article printed in the previous issue of the Simulation Standard (October, 1998).

Philips Level 9 model is widely used as an accurate deep submicron CMOS model. The model is physical, and as such lands itself to accurate extraction methodologies. This paper describes, step by step, an extraction methodology that was developed in collaboration with an industrial partner, and has been validated for its accuracy.

Strategy #8: Subthreshold region I subth_highVB_mm9_min

This strategy must be used at the end of the local optimization sequence.

The optimized parameter is: VSBTR. This parameter will not be optimized on a long and wide device.

We work on ISUB/VGS for different VDS and at VBS=0V.

Strategy #9: Substrate current I isub_mm9_min.

The optimized parameters are: A1R, A2R, A3R. Take care that A1R and A2R are strongly correlated. So, this strategy may need to be modified for each device.

The Optimization Sequence

An example of optimization sequence is given on the next figures. The order here is important. The first strategy should be #1 or #2, depending on body effect observed on our devices. But only one of these should be present in the sequence. Then #3 should be the second strategy. #4, #5, #6 must follow in the sequence. Utmost III will recognize itself the type of device it is displaying, and so which strategy to apply. Only one will be executed for a given device. Then #7 should follow. #9 is optional, but is strongly recommended. #8 must be the last strategy of this sequence.