For Next Generation Nanowires, Simulation from Atoms to SPICE

As process nodes continue to shrink, the requirement for additional physics-based simulation is gradually creeping into each stage of the design process. By way of illustration, Technology Computer Aided Design (TCAD) simulations are becoming more atomistic in nature, SPICE models are becoming process aware to take account of localized strain effects, and back or middle end of line (BEOL or MEOL) parasitics are moving from exclusively two-dimensional (2D) rule-based solutions to full 3D structure field solvers for numerous critical sections of the layout.

Atomistic Analysis and Next Generation Computing at IEDM 2019

IEDM is THE device conference with more than a thousand participants from major companies and R&D institutes. Many talks were dedicated to new memory devices and circuits, including Ferroelectrics, MRAM, RRAM, driven by the requirements of AI processing. EUV is definitely there for 3nm and beyond. 3D integration was shown for LP-HP logic and RF. Gate-All-Around devices, with nanowires or nanosheets are mature versus FinFET.

TCAD Recommended Textbooks

CMOS: Mixed-Signal Circuit Design, Second Edition R. Jacob Baker. Published…

3D NAND 메모리 셀의 셀렉트 게이트 트랜지스터 최적화

2019년 11월 22일 | 3:00am-3:30am (한국 시각) 셀렉트 게이트 트랜지스터를 중심으로 3D NAND 메모리 셀의 동작을 최적화하기 위해 TCAD 공정 및 소자 소프트웨어를 소개합니다.

Silvaco Exhibits and Presents Invited Paper on Atomistic Simulation at IEDM 2019

The IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. It is the flagship conference forNanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices Novel quantum and nano-scale devices and phenomenology Optoelectronics, devices for power and energy harvesting, high-speed devices Process technology and device modeling and simulation

극저온에서의 실리콘 소자 시뮬레이션

2019년 11월 8일 | 3:00am-3:30am (한국 시각) 4K~100K 온도에서 실리콘 소자의 동작 시뮬레이션에 drift-diffusion 방법을 사용할 때 발생하는 문제에 대해 논의합니다.

SiC 및 기타 와이드 밴드갭 물질: 공정부터 소자 시뮬레이션까지

2019년 11월 1일 | 3:00am-3:30am (한국 시각) 실바코의 TCAD 툴을 소개하고, wide bandgap 물질에 대한 공정 및 소자 시뮬레이션 기능을 살펴봅니다.

How TCAD Can Optimize Power Electronics

The power electronics (PE) market is growing rapidly, driven by the accelerating demand of EV and HEV vehicles. Power devices lend themselves to design and manufacturing innovations at the transistor-level to improve device performance and reduce development and production costs. Silicon-carbide (SiC), gallium-nitride (GaN), and other wide bandgap materials have started to replace silicon in high-voltage power devices.

TCAD