2019년 10월 11일 | 2:00am-2:30am (한국 시각)
반도체 기술이 발전함에 따라 on-chip 변동의 영향이 커지며, 이는 보다 정교한 솔루션이 필요하다는 것을 의미합니다. 따라서, 가능한 생산 시간 및 비관적인 관점을 줄이는 방법 등 다양한 문제를 고려해야 합니다. 업계의 새로운 접근 방식은 이전 접근 방식보다 지나친 비관적 생각을 줄이려는 의도이지만, 모두 절충이 필요합니다. 이번 시간에 이러한 과제에 대해 업계가 바라보는 관점을 제시하고, 현재와 미래의 솔루션에 이르는 과정을 소개합니다. 또한 실바코가 이러한 최신 과제에 어떻게 접근하고 있는지 살펴봅니다.
Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field, high carrier mobility, low dielectric constant, and high thermal conductivity, as shown in Table 1.
PowerAmerica’s strategic roadmap for next generation wide bandgap (WBG) power electronics (PE) came out earlier this year. The public version of the roadmap includes a background/introduction and market forecast pertaining to silicon carbide (SiC) and gallium nitride (GaN) PE. I learned a great deal about SiC & GaN PE in this roadmap and I have copied the relevant sections below.
y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today we see SOCs running under a 1V supply voltage, but there is a totally different market for power devices that are at the other end of the voltage spectrum and they handle switching ranges from 12V – 250V. To learn more about power devices and how the process and device modeling is done, I read a Silvaco publication entitled Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET.
I started out my engineering career by doing transistor-level circuit design and we used a proprietary SPICE circuit simulator. One thing that I quickly realized was that the accuracy of my circuit simulations depended entirely on the model files and parasitics. Here we are 40 years later and the accuracy of SPICE circuit simulations still depend on the model files and parasitics, but with the added task of using 3D field solvers to get accurate parasitic values, and even the use of 3D TCAD tools to model the complex physics of nm IC designs using FinFET transistors.
A quick search of the IEEE Xplore online library gives a list of more than 230 published technical articles on Power Device Simulation using Silvaco TCAD. Here are some recent papers with the authors’ abstracts that cover silicon-carbide (SiC) and Junction-Less Double Gate MOSFET devices. Any mention of ‘we’ or ‘our’ refers to the paper’s authors:
일시: 2019년 8월 16일 | 시각: 2:00am-2:30am (한국 시각)
Clever는 고정밀 적응형 메쉬 필드 솔버를 채용하여, Hipex에서 Stellar를 실행하거나 규칙 기반 기생 성분을 추출할 때 정확성을 점검하기 위해 사용할 수 있습니다.
Over the past 50 years in our industry, there have been three invariant principles:
Moore’s Law drives the pace of Si technology scaling
system memory utilizes MOS devices (for SRAM and DRAM)
computation relies upon the “von Neumann” architecture