TCAD – 포토 다이오드 개발의 핵심 요소
2023년 2월 24일 3:00am-3:30am (한국 시각)
이번 시간에 포토 다이오드 기술을 소개하고, 다양한 검출기 토폴로지 및 물질 세트에 TCAD를 폭넓게 적용하는 방법에 대해 설명합니다.
엔트리 Gigi Boss
Cello와 Viola를 활용하여 Silterra의 스탠더드 셀과 I/O 라이브러리를 최적화
2023년 2월 17일 3:00am-3:30am (한국 시각)
이번 시간에 다양한 라이브러리를 개발, 최적화, 검증하는 과제를 소개하고, Cello, Viola, SmartSpice를 활용하여 빠르고 정확한 결과를 얻는 방법을 알아봅니다.
How to Search, View and Use Default Parameters from the Silvaco Material DataBase SMDB with DeckBuild
Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device. Silver can be started by clicking the launch button in DeckBuild.
Utmost IV를 활용한 소자 모델링의 최신 기술
2023년 1월 27일 3:00am-3:30am (한국 시각)
이번 시간에 모델링 소프트웨어 플랫폼에 새로 추가된 Corner and Retargeting 모듈을 소개하고, 실바코의 Utmost IV가 기여한 최신 모델과 기술을 검토합니다.
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].
실바코 이사회에 5명의 업계 전문가 영입
2022년 11월 8일
Writing an Impurity Activation Model with the Open Model Library
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will be electrically active. To address this effect, Silvaco Victory Process models dopant activation in Silicon Carbide in 3 ways.
User Probes and Arbitrary Parameter Sweeps in Victory Device
One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in a Deckbuild loop), such as doping, stress, or layer thicknesses, to add the swept parameter to a log file. To do so, simply create a USER probe (with an optional name), and set the parameter USER on the MODELS statement to some value. This parameter (and value) will be added to the log file. The available user parameters are USER1, USER2, USER3, and USER4. The following shows a DeckBuild loop (go victoryd) to simulate the effect of varying STRESS_XX on the mobility.
Victory Visual – 실바코의 TCAD용 시각화 솔루션
2022년 9월 23일 | 2:00am-2:30am (한국 시각)
이번 시간에 TCAD를 시각적으로 표현하기 위한 Victory Visual의 기능에 대해 살펴봅니다.
Quantum Transport Simulation at Atomistic Accuracy of a Nanowire FET
The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice of material is made of Si, Ge, or SiGe alloy thanks to their high carrier concentrations. In compliment to III-V technology envisaged for a while, new 2D materials are also investigated (for example, the TMDs monolayers1). Such nanomaterials and nano-architectures require atomistic simulations for at least two crucial reasons: 1) bulk parameters like the effective masses and forbidden bandgap are no longer pertinent quantities, and 2) the wave nature of charge carriers becomes predominant for predicting transport characteristics including scattering events.