Victory Process (VP) uses two types of mesh to represent the structure:
• The geometry mesh, which is used to represent the material regions.
• The volume mesh, which is used to represent the volume data (doping etc).

Unlike conventional ohmic contact thin-film transistors (TFTs), contact-controlled TFTs [1], [2] rely on source energy barriers to produce a range of benefits including: low saturation voltages; extremely high intrinsic gain; power-efficiency; electrical stability; and uniformity of operation, notably with imprecise processes [3]. Generally, these benefits come at the expense of transconductance, however in materials such as polysilicon, similar levels of on-current can be obtained in a more compact footprint without any trace of kink-effect [4], [5].