Learn How TCAD is a Key Enabler for Photodiode Development
2023年2月24日
本ウェビナーでは、シルバコがこれらの技術について解説し、TCADが様々な光検出器の構造と材料の組合せに対して幅広く適用されており、エンドユーザ市場に貢献していることを説明します。
エントリー - Gigi Boss
Learn How SilTerra Uses Cello and Viola for Standard Cells and I/O Library Optimization and Characterization
2023年2月17日
本ウェビナーでは、さまざまなライブラリの開発、最適化、検証における課題を共有し、Cello、Viola、SmartSpiceがユニークかつダイナミックな方法でどのように貢献し、高速かつ正確な結果を実現する方法を紹介します。
How to Search, View and Use Default Parameters from the Silvaco Material DataBase SMDB with DeckBuild
Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device. Silver can be started by clicking the launch button in DeckBuild.
Learn About the Latest Advances in Device Modeling Using Silvaco Utmost IV
2023年1月27日
本ウェビナーでは、シルバコのUtmost IVデバイス・モデリング・ツールの2022年ベースラインの機能強化の一部をご紹介します。
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].
Writing an Impurity Activation Model with the Open Model Library
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will be electrically active. To address this effect, Silvaco Victory Process models dopant activation in Silicon Carbide in 3 ways.
User Probes and Arbitrary Parameter Sweeps in Victory Device
One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in a Deckbuild loop), such as doping, stress, or layer thicknesses, to add the swept parameter to a log file. To do so, simply create a USER probe (with an optional name), and set the parameter USER on the MODELS statement to some value. This parameter (and value) will be added to the log file. The available user parameters are USER1, USER2, USER3, and USER4. The following shows a DeckBuild loop (go victoryd) to simulate the effect of varying STRESS_XX on the mobility.
Learn About Victory Visual, Silvaco’s New Graphical Visualization Solution for TCAD
2022年9月23日 | 2:00-2:30 JST
本ウェビナーでは、シルバコのTCAD可視化ツールの最新世代であるVictory Visualの機能を順を追って説明します。本ウェビナーは、Victory Visualの主要な機能を理解するためのハウツーガイドであると同時に、Victory AtomisticおよびVictory Mesh – Solid Modeling向けの機能についても簡単に紹介することを目的としています。これまでのシルバコTCADツールのユーザおよび新しいユーザの視点から、多くの質問を取り上げます。
Quantum Transport Simulation at Atomistic Accuracy of a Nanowire FET
The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice of material is made of Si, Ge, or SiGe alloy thanks to their high carrier concentrations. In compliment to III-V technology envisaged for a while, new 2D materials are also investigated (for example, the TMDs monolayers1). Such nanomaterials and nano-architectures require atomistic simulations for at least two crucial reasons: 1) bulk parameters like the effective masses and forbidden bandgap are no longer pertinent quantities, and 2) the wave nature of charge carriers becomes predominant for predicting transport characteristics including scattering events.