3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
Yunwei Ma, Yuhao Zhang
Center for Power Electronics Systems, Virginia Tech
E-mail: email@example.com; firstname.lastname@example.org
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V . Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance .
On each facet of the tri-gate, the metal-insulator-semiconductor (MIS) gate stack has become a popular choice . Despite good performance, some challenges of tri-gate GaN MIS-HEMTs (Tri-MISHEMTs) make their commercialization very slow. First, the E-mode device usually requires very narrow fins or an additional AlGaN recess . Second, the MIS tri-gate produces parasitic MIS channels at the fin sidewalls, which increase the gate charge. In addition, the commonly seen interface states in the MIS structure could induce high-temperature instabilities .
To address these challenges, we recently proposed a new type of tri-gate HEMTs, the tri-gate junction HEMT (Tri-JHEMT) . In the Tri-JHEMT, the p-n junction wraps around the AlGaN/GaN fins in the gate region. As compared to the MIS tri-gate, the junction tri-gate allows stronger depletion, thus relaxing the lithography requirement to realize the E-mode operation and avoiding the punch-through at high drain biases (VD) . A GaN Tri-JHEMT is then experimentally demonstrated using the p-type NiO , which exhibits the E-mode operation, high breakdown voltage, and excellent thermal stability (e.g., a breakdown voltage near 2000 V at 150 oC) .
Following the experimental demonstration, we studied the physics and performance space of Tri-JHEMTs using the 3D TCAD simulation . In this study, we used the NiO-based Tri-JHEMT data to calibrate the 3D TCAD simulation model, followed by the simulation of p-GaN based Tri-JHEMT. The p-GaN based junction tri-gate is expected to provide a stronger depletion as compared to the NiO-based tri-gate, due to the higher built-in potential of the GaN p-n junction as compared to the GaN/NiO junction. In addition, the p-GaN based Tri-JHEMT can be potentially fabricated using the current foundry process. 3D TCAD simulations enable a direct comparison of the Tri-JHEMT with the planar p-GaN HEMT.
This article describes the 3D TCAD simulation of GaN trigate HEMTs and showcases how 3D simulations unveil the Tri-JHEMT’s unique physics as compared to the planar-gate HEMT or Tri-MISHEMT.